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STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple, Tensión Máxima Emisor-Base: 20 V, Tipo de Montaje: Montaje en orificio pasante, Tensión de Saturación Máxima Base-Emisor: 2 V, Tensión Base Máxima del Colector: 2.000 V, Corriente de Corte Máxima del Colector: 100µA, Dimensiones: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77
1

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple, Tensión Máxima Emisor-Base: 20 V, Tipo de Montaje: Montaje en orificio pasante, Tensión de Saturación Máxima Base-Emisor: 2 V, Tensión Base Máxima del Colector: 2.000 V, Corriente de Corte Máxima del Colector: 100µA, Dimensiones: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04
1

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, STP03D200, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple

STMicroelectronics Transistor Darlington, NPN 100 mA, 1.200 V, HFE:230 @ 20 mA @ 10 V, TO-220, 3 pines Simple, Tensión Máxima Emisor-Base: 20 V, Tipo de Montaje: Montaje en orificio pasante, Tensión de Saturación Máxima Base-Emisor: 2 V, Tensión Base Máxima del Colector: 2.000 V, Corriente de Corte Máxima del Colector: 100µA, Dimensiones: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04
1