STMicroelectronics Démarreur moteur, triphasé, 75 V, 20 A STMicroelectronics Démarreur moteur, triphasé, 75 V, 20 A, MPN: STSPIN32G4 EUR 10.84 1
STMicroelectronics Arrancador de motor, trifásico, 75 V, 20 A STMicroelectronics Arrancador de motor, trifásico, 75 V, 20 A, MPN: STSPIN32G4 EUR 10.84 1
STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B, MPN: STGIB15CH60TS-LZ EUR 15.42 1
STMicroelectronics Démarreur moteur, triphasé, 75 V, 20 A STMicroelectronics Démarreur moteur, triphasé, 75 V, 20 A, Phase: 3, Tension: 5,5-75 V, MPN: STSPIN32G4 EUR 11.99 1
STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2 STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2, MPN: SCT20N120H EUR 12.44 1
STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247 STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247, MPN: SCTWA20N120 EUR 15.88 1
STMicroelectronics Arrancador de motor, trifásico, 75 V, 20 A STMicroelectronics Arrancador de motor, trifásico, 75 V, 20 A, Fase: 3, Tensión Nominal: 5,5-75 V, MPN: STSPIN32G4 EUR 11.99 1
STMicroelectronics SOIC 20 broches STMicroelectronics SOIC 20 broches, Type de CI: Quad Line Driver, Type de montage: CMS, Nombre de transmetteurs: 4, Dimensions: 13 x 7.6 x 2.35mm, Température d'utilisation maximum: +125 °C (protection contre les surchauffes), +85 °C (ambiante), Température de fonctionnement minimum: -25 °C (ambiante, protection contre les surchauffes), Largeur: 7.6mm, Longueur: 13mm, MPN: L6374FP013TR EUR 10.23 1
STMicroelectronics Starter per motore, 3 fasi, 5,5-75 V, 20 A STMicroelectronics Starter per motore, 3 fasi, 5,5-75 V, 20 A, MPN: STSPIN32G4 EUR 11.99 1
STMicroelectronics Starter per motore, 3 fasi, 5,5-75 V, 20 A STMicroelectronics Starter per motore, 3 fasi, 5,5-75 V, 20 A, MPN: STSPIN32G4 EUR 10.84 1
STMicroelectronics L6374FP013TR, SOIC 20 pines STMicroelectronics L6374FP013TR, SOIC 20 pines, Tipo de CI: Quad Line Driver, Tipo de Montaje: Montaje superficial, Dimensiones: 13 x 7.6 x 2.35mm, Temperatura Máxima de Funcionamiento: +125 (Overtemperature Protection) °C, +85 (Ambient) °C, Temperatura de Funcionamiento Mínima: -25 (Ambient, Overtemperature Protection) °C, Ancho: 7.6mm, Longitud: 13mm EUR 10.23 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ,, 20 A, 600 V, SDIP2B, 26 broches, Série STMicroelectronics IGBT,, 20 A, 600 V, SDIP2B, 26 broches, Série, MPN: STGIB15CH60TS-LZ EUR 15.42 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ, 20 A, 600 V, SDIP2B, 26-Pines Serie STMicroelectronics IGBT, 20 A, 600 V, SDIP2B, 26-Pines Serie, MPN: STGIB15CH60TS-LZ EUR 15.42 1
STMicroelectronics MOSFET canal N,, H2PAK-2 20 A 1200 V, 3 broches STMicroelectronics MOSFET canal N,, H2PAK-2 20 A 1200 V, 3 broches, MPN: SCT20N120H EUR 12.44 1
STMicroelectronics Module MOSFET canal N,, Hip247 20 A 1200 V, 3 broches STMicroelectronics Module MOSFET canal N,, Hip247 20 A 1200 V, 3 broches, MPN: SCTWA20N120 EUR 15.88 1
STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B, Tensione massima gate emitter: 600V, Dissipazione di potenza massima: 0,08 mW, Numero pin: 26, Configurazione transistor: Serie, MPN: STGIB15CH60TS-LZ EUR 14.47 1
STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B STMicroelectronics IGBT, VCE 600 V, IC 20 A, SDIP2B, Tensione massima gate emitter: 600V, Dissipazione di potenza massima: 0,08 mW, Numero pin: 26, Configurazione transistor: Serie, MPN: STGIB15CH60TS-LZ EUR 15.74 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ, 20 A, 600 V, SDIP2B, 26-Pines Serie STMicroelectronics IGBT, 20 A, 600 V, SDIP2B, 26-Pines Serie, Tensión Máxima Puerta-Emisor: 600V, Disipación de Potencia Máxima: 0,08 mW, MPN: STGIB15CH60TS-LZ EUR 14.47 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ,, 20 A, 600 V, SDIP2B, 26 broches, Série STMicroelectronics IGBT,, 20 A, 600 V, SDIP2B, 26 broches, Série, Tension Grille Emetteur maximum: 600V, Dissipation de puissance maximum: 0,08 mW, MPN: STGIB15CH60TS-LZ EUR 14.47 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ, 20 A, 600 V, SDIP2B, 26-Pines Serie STMicroelectronics IGBT, 20 A, 600 V, SDIP2B, 26-Pines Serie, Tensión Máxima Puerta-Emisor: 600V, Disipación de Potencia Máxima: 0,08 mW, MPN: STGIB15CH60TS-LZ EUR 15.74 1
STMicroelectronics IGBT, STGIB15CH60TS-LZ,, 20 A, 600 V, SDIP2B, 26 broches, Série STMicroelectronics IGBT,, 20 A, 600 V, SDIP2B, 26 broches, Série, Tension Grille Emetteur maximum: 600V, Dissipation de puissance maximum: 0,08 mW, MPN: STGIB15CH60TS-LZ EUR 15.74 1
STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2 STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2, Tensione massima drain source: 1200 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 239V, Materiale del transistor: SiC, Serie: SiC MOSFET, MPN: SCT20N120H EUR 11.55 1
STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2 STMicroelectronics MOSFET, canale N, 0,203 Ω, 20 A, H2PAK-2, Tensione massima drain source: 1200 V, Modalità del canale: Enhancement, Tensione di soglia gate massima: 239V, Materiale del transistor: SiC, Serie: SiC MOSFET, MPN: SCT20N120H EUR 16.03 1
STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247 STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Depletion, Tensione di soglia gate massima: 3.5V, Materiale del transistor: SiC, Serie: SCT, MPN: SCTWA20N120 EUR 18.39 1
STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247 STMicroelectronics Modulo MOSFET, canale N, 0,189 Ω, 20 A, HiP247, Tensione massima drain source: 1200 V, Numero pin: 3, Modalità del canale: Depletion, Tensione di soglia gate massima: 3.5V, Materiale del transistor: SiC, Serie: SCT, MPN: SCTWA20N120 EUR 16.20 1