STMicroelectronics MOSFET, Hip247 60 A 1200 V, 4 broches STMicroelectronics MOSFET, Hip247 60 A 1200 V, 4 broches, MPN: SCTWA60N120G2-4 EUR 23.49 1
STMicroelectronics MOSFET, 5.2e+007 Ω, 60 A, HiP247, Su foro STMicroelectronics MOSFET, 5.2e+007 Ω, 60 A, HiP247, Su foro, MPN: SCTWA60N120G2-4 EUR 23.49 1
STMicroelectronics MOSFET, SCTWA60N120G2-4, 60 A, 1.200 V, 4-Pin, HiP247 SCTW STMicroelectronics MOSFET, 60 A, 1.200 V, 4-Pin, HiP247 SCTW, MPN: SCTWA60N120G2-4 EUR 23.49 1
STMicroelectronics MOSFET, 5.2e+007 Ω, 60 A, HiP247, Su foro STMicroelectronics MOSFET, 5.2e+007 Ω, 60 A, HiP247, Su foro, Tensione massima drain source: 1200 V, Tensione di soglia gate massima: 5V, Serie: SCTW, MPN: SCTWA60N120G2-4 EUR 25.63 1
STMicroelectronics MOSFET, Hip247 60 A 1200 V, 4 broches STMicroelectronics MOSFET, Hip247 60 A 1200 V, 4 broches, Type de montage: Traversant, Résistance Drain Source maximum: 5,2 e + 007 Ω, Tension de seuil maximale de la grille: 5V, Série: SCTW, MPN: SCTWA60N120G2-4 EUR 25.63 1
STMicroelectronics MOSFET, SCTWA60N120G2-4, 60 A, 1.200 V, 4-Pin, HiP247 SCTW STMicroelectronics MOSFET, 60 A, 1.200 V, 4-Pin, HiP247 SCTW, Tipo de Montaje: Montaje en orificio pasante, Resistencia Máxima Drenador-Fuente: 5,2e+007 Ω, Tensión de umbral de puerta máxima: 5V, MPN: SCTWA60N120G2-4 EUR 25.63 1
STMicroelectronics Diode CMS, 120A, 400V, ISOTOP STMicroelectronics Diode CMS, 120A, 400V, ISOTOP, Courant direct continu maximum: 60 (Per Diode) A, 120 (Per Device) A, Type de redressement: Recouvrement rapide, Type diode: Jonction au silicium, Chute minimale de tension directe: 1.5V, Temps de recouvrement inverse crête: 80ns, MPN: STTH120R04TV1 EUR 23.49 3