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STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT,, 145 A, 650 V, To247-4, 4 broches, Simple, MPN: STGW100H65FB2-4

EUR 6.52

1

STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT,, 145 A, 650 V, To247-4, 4 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 441 W, MPN: STGW100H65FB2-4

EUR 7.57

1

STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT,, 145 A, 650 V, To247-4, 4 broches, Simple, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 441 W, MPN: STGW100H65FB2-4

EUR 6.54

1

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics IGBT, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple, MPN: STGW100H65FB2-4

EUR 6.52

1

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics IGBT, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 441 W, MPN: STGW100H65FB2-4

EUR 7.57

1

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics IGBT, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 441 W, MPN: STGW100H65FB2-4

EUR 6.54

1

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC, MPN: STW48N60M6-4

EUR 7.36

1

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches, MPN: STW48N60M6-4

EUR 7.36

1

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC, Resistencia Máxima Drenador-Fuente: 0,061 Ω, Tensión de umbral de puerta máxima: 4.75V, MPN: STW48N60M6-4

EUR 8.36

1

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics Módulo MOSFET, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC, Resistencia Máxima Drenador-Fuente: 0,061 Ω, Tensión de umbral de puerta máxima: 4.75V, MPN: STW48N60M6-4

EUR 9.70

1

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, 115 A, 650 V, TO-247, 4-Pines 1, MPN: STGW75H65DFB2-4

EUR 5.43

1

STMicroelectronics IGBT, STGW75H65DFB2-4,, 115 A, 650 V, A-247, 4 broches

STMicroelectronics IGBT,, 115 A, 650 V, A-247, 4 broches, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 357 W, MPN: STGW75H65DFB2-4

EUR 5.45

1

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches, Résistance Drain Source maximum: 0,061 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 4.75V, Matériau du transistor: SiC, MPN: STW48N60M6-4

EUR 8.36

1

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches, Résistance Drain Source maximum: 0,061 Ω, Mode de canal: Depletion, Tension de seuil maximale de la grille: 4.75V, Matériau du transistor: SiC, MPN: STW48N60M6-4

EUR 9.70

1

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, 115 A, 650 V, TO-247, 4-Pines 1, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 357 W, MPN: STGW75H65DFB2-4

EUR 5.45

1

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, 115 A, 650 V, TO-247, 4-Pines 1, Tensión Máxima Puerta-Emisor: ±20V, Disipación de Potencia Máxima: 357 W, MPN: STGW75H65DFB2-4

EUR 6.40

1

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches, MPN: STGW75H65DFB2-4

EUR 5.43

1

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4, MPN: STW48N60M6-4

EUR 7.36

1

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4, MPN: STGW100H65FB2-4

EUR 6.52

1

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches, Tension Grille Emetteur maximum: ±20V, Dissipation de puissance maximum: 357 W, MPN: STGW75H65DFB2-4

EUR 6.40

1

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 441 W, Configurazione transistor: Singolo, MPN: STGW100H65FB2-4

EUR 6.54

1

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4, Tensione massima gate emitter: ±20V, Dissipazione di potenza massima: 441 W, Configurazione transistor: Singolo, MPN: STGW100H65FB2-4

EUR 7.57

1

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4, Tensione massima drain source: 600 V, Modalità del canale: Depletion, Tensione di soglia gate massima: 4.75V, Materiale del transistor: SiC, MPN: STW48N60M6-4

EUR 9.70

1

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4, Tensione massima drain source: 600 V, Modalità del canale: Depletion, Tensione di soglia gate massima: 4.75V, Materiale del transistor: SiC, MPN: STW48N60M6-4

EUR 8.36

1

STMicroelectronics Multiplexor de potencia L6376D, 4 canales 500mA 20 pines PowerSO

STMicroelectronics Multiplexor de potencia L6376D, 4 canales 500mA 20 pines PowerSO, Tipo de Montaje: Montaje superficial, Temperatura Máxima de Funcionamiento: +85 °C, Temperatura de Funcionamiento Mínima: -25 °C, Dimensiones: 16 x 11.1 x 3.3mm, Tensión de Entrada Mínima: 4 V

EUR 8.27

1

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STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT, STGW100H65FB2-4,, 145 A, 650 V, To247-4, 4 broches, Simple

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics IGBT, STGW100H65FB2-4, N-Canal, 145 A, 650 V, TO247-4, 4-Pines 1 Simple

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics Módulo MOSFET, STW48N60M6-4, N-Canal-Canal, 39 A, 600 V, Reducción, 4-Pin, TO247-4 ST SiC

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, STGW75H65DFB2-4,, 115 A, 650 V, A-247, 4 broches

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics Module MOSFET canal N,, To247-4 39 A 600 V, 4 broches

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, STGW75H65DFB2-4, 115 A, 650 V, TO-247, 4-Pines 1

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics IGBT, 115 A, 650 V, A-247, 4 broches

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics IGBT, VCE 650 V, IC 145 A, canale N, TO247-4

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics Modulo MOSFET, canale N, 0,061 Ω, 39 A, TO247-4

STMicroelectronics Multiplexor de potencia L6376D, 4 canales 500mA 20 pines PowerSO

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