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STMicroelectronics MOSFET, STH3N150-2, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si

STMicroelectronics MOSFET, STH3N150-2, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si

STMicroelectronics MOSFET, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si, Tipo de Montaje: Montaje superficial, Resistencia Máxima Drenador-Fuente: 9 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5V, Tensión de umbral de puerta mínima: 3V, Disipación de Potencia Máxima: 140 W, Tensión Máxima Puerta-Fuente: -30 V, +30 V, Altura: 4.8mm, MPN: STH3N150-2

EUR 5.26
1

STMicroelectronics MOSFET, STH3N150-2, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si

STMicroelectronics MOSFET, STH3N150-2, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si

STMicroelectronics MOSFET, N-Canal-Canal, 2,5 A, 1.500 V, 3-Pin, H2PAK-2 MDmesh Simple Si, Tipo de Montaje: Montaje superficial, Resistencia Máxima Drenador-Fuente: 9 Ω, Modo de Canal: Mejora, Tensión de umbral de puerta máxima: 5V, Tensión de umbral de puerta mínima: 3V, Disipación de Potencia Máxima: 140 W, Tensión Máxima Puerta-Fuente: -30 V, +30 V, Longitud: 10.4mm, Temperatura Máxima de Funcionamiento: +150 °C, MPN: STH3N150-2

EUR 5.59
1

STMicroelectronics MOSFET canal N,, H2PAK-2 2,5 A 1500 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 2,5 A 1500 V, 3 broches

STMicroelectronics MOSFET canal N,, H2PAK-2 2,5 A 1500 V, 3 broches, Type de montage: CMS, Résistance Drain Source maximum: 9 Ω, Mode de canal: Enrichissement, Tension de seuil maximale de la grille: 5V, Tension de seuil minimale de la grille: 3V, Dissipation de puissance maximum: 140 W, Configuration du transistor: Simple, Tension Grille Source maximum: -30 V, +30 V, Longueur: 10.4mm, Température d'utilisation maximum: +150 °C, MPN: STH3N150-2

EUR 5.59
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94
1

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches

STMicroelectronics Transistor Darlington, NPN, 100 mA, 1200 V, A-220, Traversant, 3 broches, Tension Emetteur Base maximum: 20 V, Configuration du transistor: Simple, Gain en courant DC minimum: 230 @ 20 mA @ 10 V, Tension de saturation Base Emetteur maximum: 2 V, Tension Collecteur Base maximum: 2000 V, Courant de coupure Collecteur maximum: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04
1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.94
1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 6.77
1

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro

STMicroelectronics Transistor Darlington NPN, TO-220, 3 Pin, 100 mA, 1200 V, Montaggio su foro, Tensione massima base emitter: 20 V, Configurazione transistor: Singolo, Guadagno minimo corrente c.c.: 230 @ 20 mA @ 10 V, Tensione massima di saturazione emitter: 2 V, Tensione massima base del collettore: 2000 V, Corrente massima di cut-off del collettore: 100µA, Dimensioni: 10.4 x 4.6 x 15.75mm, MPN: STP03D200

EUR 8.04
1