IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 26.16mm, Length: 19.96mm