Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole
Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 938 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 10.8mJ, Gate Capacitance: 4856pF, Maximum Operating Temperature: +175 °C