Infineon N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB IRF60B217
Infineon N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB IRF60B217, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V