ROHM Dual N-Channel MOSFET, 27 (N Channel) A, 80 (N Channel) A, 30 V, 8-Pin HSOP HP8S36TB
ROHM Dual N-Channel MOSFET, 27 (N Channel) A, 80 (N Channel) A, 30 V, 8-Pin HSOP HP8S36TB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 22 W, 29 W, Maximum Gate Source Voltage: ±128 V, ±20 V, Height: 1.1mm, Length: 5mm