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STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 62V, Minimum Breakdown Voltage: 30V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 27V, Maximum Peak Pulse Current: 968A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 2.72

1

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 62V, Minimum Breakdown Voltage: 30V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 27V, Maximum Peak Pulse Current: 968A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 2.00

1

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 62V, Minimum Breakdown Voltage: 30V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 27V, Maximum Peak Pulse Current: 968A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 2.56

1

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.2mm

GBP 0.05

1

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin DPAK STD1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin DPAK STD1HN60K3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.4mm

GBP 0.13

1

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.2mm

GBP 0.04

1

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 6.2mm

GBP 0.05

1

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STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-27, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin DPAK STD1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

STMicroelectronics N-Channel MOSFET, 1.2 A, 600 V, 3-Pin IPAK STU1HN60K3

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