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STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

GBP 9.17

1

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 9.38

1

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 10.64

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

GBP 9.84

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 10.05

1

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 670mV, Peak Non-Repetitive Forward Surge Current: 900A

GBP 16.54

1

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 670mV, Peak Non-Repetitive Forward Surge Current: 900A

GBP 16.56

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

GBP 15.93

1

STMicroelectronics SiC N-Channel MOSFET, 40 A, 650 V, 4-Pin PowerFLAT 8x8 HV SCTL35N65G2V

GBP 9.27

1

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2, Mounting Type: Surface Mount, Rectifier Type: High Voltage, Maximum Forward Voltage Drop: 2V, Peak Reverse Recovery Time: 100ns

GBP 16.71

1

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2, Mounting Type: Surface Mount, Rectifier Type: High Voltage, Maximum Forward Voltage Drop: 2V, Peak Reverse Recovery Time: 100ns

GBP 17.27

1

STMicroelectronics 400V 120A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH120R04TV1

STMicroelectronics 400V 120A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH120R04TV1, Mounting Type: Surface Mount, Rectifier Type: Fast Recovery, Maximum Forward Voltage Drop: 1.5V, Peak Reverse Recovery Time: 80ns

GBP 17.48

1

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 650mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 700A

GBP 14.55

1

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 650mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 700A

GBP 13.39

1

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV, Mounting Type: Panel Mount, Diode Configuration: Isolated, Maximum Forward Voltage Drop: 650mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 700A

GBP 13.35

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4, Maximum Drain Source Resistance: 0.07 Ω

GBP 16.27

1

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4, Maximum Drain Source Resistance: 0.07 Ω

GBP 14.33

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

GBP 14.12

1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.15V, Peak Reverse Recovery Time: 65ns, Peak Non-Repetitive Forward Surge Current: 750A

GBP 16.34

1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.15V, Peak Reverse Recovery Time: 65ns, Peak Non-Repetitive Forward Surge Current: 750A

GBP 16.32

1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.15V, Peak Reverse Recovery Time: 65ns, Peak Non-Repetitive Forward Surge Current: 750A

GBP 16.34

1

STMicroelectronics 300V 160A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH16003TV1

STMicroelectronics 300V 160A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH16003TV1, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 80ns, Peak Non-Repetitive Forward Surge Current: 800A

GBP 17.26

1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.15V, Peak Reverse Recovery Time: 65ns, Peak Non-Repetitive Forward Surge Current: 750A

GBP 16.32

1

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 18.03 x 8.51mm, Length: 21.84mm, Width: 18.03mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 8.88

1

STMicroelectronics 600V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6006TV1

STMicroelectronics 600V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6006TV1, Mounting Type: Panel Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.85V, Number of Elements per Chip: 2, Peak Reverse Recovery Time: 70ns, Peak Non-Repetitive Forward Surge Current: 210A

GBP 14.74

1

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STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO247-4 STW70N60DM6-4

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV

STMicroelectronics 45V 120A, Dual Schottky Diode, 4-Pin ISOTOP STPS12045TV

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

STMicroelectronics SiC N-Channel MOSFET, 40 A, 650 V, 4-Pin PowerFLAT 8x8 HV SCTL35N65G2V

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2

STMicroelectronics 1000V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6110TV2

STMicroelectronics 400V 120A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH120R04TV1

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics 100V 40A, Dual Schottky Diode, 4-Pin ISOTOP STPS80H100TV

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

STMicroelectronics SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL SCTWA40N120G2V-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV2

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1

STMicroelectronics 300V 160A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH16003TV1

STMicroelectronics 200V 50A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH10002TV1

STMicroelectronics M4T32-BR12SH6, Battery Backup IC, 3 V 4-Pin, SNAPHAT

STMicroelectronics 600V 30A, Dual Silicon Junction Diode, 4-Pin ISOTOP STTH6006TV1

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