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STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Length: 40mm, Width: 27mm, Height: 14mm, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C

GBP 7.35

1

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Repetitive Peak Off-State Current: 10µA

GBP 6.73

1

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA, Thyristor Type: SCR, Package Type: RD91, Surge Current Rating: 610A, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.3V, Maximum Holding Current: 150mA, Dimensions: 40 x 27 x 14mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Repetitive Peak Off-State Current: 10µA

GBP 7.82

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.57

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.58

1

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 700 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.63

1

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 700 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.65

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 5.39

1

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

GBP 5.45

1

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 441 W, Transistor Configuration: Single

GBP 4.95

1

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 441 W, Transistor Configuration: Single

GBP 6.33

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

GBP 5.19

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 4.68

1

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4, Maximum Drain Source Resistance: 0.061 Ω, Maximum Gate Threshold Voltage: 4.75V

GBP 6.85

1

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG, Maximum Drain Source Resistance: 39 mΩ, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.53

1

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO, Mounting Type: Surface Mount, Dimensions: 9.5 x 7.6 x 3.65mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 9.5mm, Maximum Power Dissipation: 90 W

GBP 4.88

1

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 357 W, MPN: STGW75H65DFB2-4

GBP 4.85

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Class-AB, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Car Audio, Maximum Power: 35 W @ 4 Ω, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Length: 19.6mm

GBP 5.01

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Audio Power Amplifier, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Automotive, Amplifier Class: Class A-B, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Maximum Operating Temperature: +150 °C

GBP 4.54

1

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V, Amplifier Type: Audio Power Amplifier, Output Type: 2 Channel Stereo, 4 Channel Stereo, Application: Automotive, Amplifier Class: Class A-B, Mounting Type: Through Hole, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Single Ended, Dimensions: 19.6 x 5 x 17.75mm, Maximum Operating Temperature: +150 °C

GBP 5.33

1

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 6.06

1

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 6.99mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 6.45

1

STMicroelectronics VL53L3CXV0DH/1, VL53L0X, 3000mm 12-Pin Optical LGA12

STMicroelectronics VL53L3CXV0DH/1, VL53L0X, 3000mm 12-Pin Optical LGA12, Sensor Type: Proximity Sensor, Maximum Switching Frequency: 1000 kHz, Maximum Output Voltage: 0.4 V

GBP 5.22

1

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 7.75mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 5.60

1

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT, Battery Type: Lithium-CF, Mounting Type: Through Hole, Dimensions: 21.84 x 14.99 x 7.75mm, Length: 21.84mm, Width: 14.99mm, Maximum Operating Temperature: +70 °C

GBP 5.95

1

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STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics BTW67-1000, Thyristor 1000V, 32A 80mA

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics SiC N-Channel MOSFET Module, 39 A, 600 V Depletion, 4-Pin TO247-4 STW48N60M6-4

STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO247-4 STW68N65DM6-4AG

STMicroelectronics VNQ860SP-E Multiplexer Quad:4 x 4 5.5 to 36 V, 10-Pin PowerSO

STMicroelectronics IGBT, 115 A 650 V, 4-Pin TO-247

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics, 4-Channel35W, 15-Pin MULTIWATT V E-TDA7375V

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics M4T32-BR12SH1, Battery Backup IC 4-Pin, SNAPHAT

STMicroelectronics VL53L3CXV0DH/1, VL53L0X, 3000mm 12-Pin Optical LGA12

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

STMicroelectronics M4T28-BR12SH1, Battery Backup IC, 2.8 V 4-Pin, SNAPHAT

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