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onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 455 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 454 W, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm, Gate Capacitance: 5000pF

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 454 W, Transistor Configuration: Single, Dimensions: 15.8 x 5.2 x 22.74mm, Gate Capacitance: 5000pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 454 W, Transistor Configuration: Single, Dimensions: 15.8 x 5.2 x 22.74mm, Gate Capacitance: 5000pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Energy Rating: 50mJ, Gate Capacitance: 3813pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

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onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

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