Infineon Ff150R12Rt4Hosa1
IGBT, MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)