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DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.08
1

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.07
1

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F

DiodesZetex Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F, Channel Type: N, P, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 2.2mm

GBP 0.06
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.48
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 110 MHz, Dimensions: 4.6 x 2.6 x 1.6mm, Maximum Base Emitter Saturation Voltage: -1.07 V, Maximum Collector Emitter Saturation Voltage: -0.175 V

GBP 0.33
1

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B, Mounting Type: Surface Mount, Maximum Power Dissipation: 2.45 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -20 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 110 MHz, Dimensions: 2.075 x 2.075 x 0.58mm, Maximum Base Emitter Saturation Voltage: -1.07 V, Maximum Collector Emitter Saturation Voltage: -310 mV

GBP 0.40
1

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89

DiodesZetex Diodes Inc ZXTP2008ZTA PNP Transistor, 5.5 A, 30 V, 3-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 2.1 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 110 MHz, Dimensions: 4.6 x 2.6 x 1.6mm, Maximum Base Emitter Saturation Voltage: -1.07 V, Maximum Collector Emitter Saturation Voltage: -0.175 V

GBP 0.76
1

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B

DiodesZetex Diodes Inc ZXTP717MATA PNP Transistor, 4.5 A, 12 V, 3-Pin DFN-2020B, Mounting Type: Surface Mount, Maximum Power Dissipation: 2.45 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -20 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 110 MHz, Dimensions: 2.075 x 2.075 x 0.58mm, Maximum Base Emitter Saturation Voltage: -1.07 V, Maximum Collector Emitter Saturation Voltage: -310 mV

GBP 0.17
1