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IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 32.47

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.09

1

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 41.73

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 568 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 26.27

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 568 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 25.89

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.20

1

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 33.54

1

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 780 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 34.43

1

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 33.32

1

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 41.56

1

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA, Thyristor Type: PCT, Surge Current Rating: 10500A, Mounting Type: Screw Mount, Maximum Gate Trigger Voltage: 2.50V, Maximum Holding Current: 300mA, Dimensions: 42 (Dia.) x 14mm, Diameter: 42mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -60 °C, Peak On-State Voltage: 2V, Repetitive Peak Off-State Current: 30mA

GBP 56.40

1

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA, Thyristor Type: PCT, Surge Current Rating: 10500A, Mounting Type: Screw Mount, Maximum Gate Trigger Voltage: 2.50V, Maximum Holding Current: 300mA, Dimensions: 42 (Dia.) x 14mm, Diameter: 42mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -60 °C, Peak On-State Voltage: 2V, Repetitive Peak Off-State Current: 30mA

GBP 59.20

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.38

1

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.81

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.53

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.09

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.10

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 23.26

1

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.34

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 29.68

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.29

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.88

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 12.52

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 12.52

1

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IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100

IXYS N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227B IXFN24N100

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 28 A, 1000 V, 4-Pin SOT-227B IXFN32N100Q3

IXYS N-Channel MOSFET, 38 A, 1000 V, 4-Pin SOT-227B IXFN44N100Q3

IXYS N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227B IXFN36N100

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA

IXYS N0795YN180, Thyristor 1000 to 1800V, 795A 150mA

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

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