hynde 140 cm from GBP 1 | See the cheapest prices and offers on css.nordicadpartner.dk

IXYS 140 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 140 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: Small - 4 Pin, Maximum Turn On Time: 1 ms, Dimensions: 6.35 x 4.572 x 3.3mm, Capacitance: 13pF, Depth: 4.57mm, Length: 6.35mm, Off State Leakage Current: 1 μA, MPN: CPC1390GR

GBP 1.40

1

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA, Thyristor Type: SCR, Package Type: TO-247AD, Surge Current Rating: 560A, Mounting Type: Through Hole, Maximum Gate Trigger Voltage: 1.5V, Pin Count: 3, Length: 16.26mm, Height: 21.46mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.64V

GBP 3.84

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.49

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 6.39

1

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA, Thyristor Type: SCR Module, Package Type: TO-240, Surge Current Rating: 2.59kA, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.6V, Dimensions: 92 x 20.8 x 30.2mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.7V

GBP 25.07

1

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.26mm

GBP 8.69

1

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA, Thyristor Type: SCR Module, Package Type: TO-240, Surge Current Rating: 2.59kA, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 1.6V, Dimensions: 92 x 20.8 x 30.2mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.7V

GBP 25.07

1

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA, Thyristor Type: SCR, Package Type: TO-247AD, Surge Current Rating: 560A, Mounting Type: Through Hole, Maximum Gate Trigger Voltage: 1.5V, Pin Count: 3, Length: 16.26mm, Height: 21.46mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.64V

GBP 4.13

1

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 15.47

1

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 12.70

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 14.85

1

IXYS CS45-08io1, Thyristor 800V, 48A 200mA

IXYS CS45-08io1, Thyristor 800V, 48A 200mA, Thyristor Type: SCR, Package Type: TO-247AD, Surge Current Rating: 560A, Mounting Type: Through Hole, Maximum Gate Trigger Voltage: 1.6V, Maximum Holding Current: 100mA, Pin Count: 3, Length: 16.24mm, Width: 5.3mm, Height: 21.45mm, Dimensions: 16.24 x 5.3 x 21.45mm, Maximum Operating Temperature: +140 °C

GBP 2.13

1

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 21.80

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 15.11

1

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 22.11

1

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA, Thyristor Type: SCR Module, Package Type: Y1 CU, Surge Current Rating: 10.1kA, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 2V, Dimensions: 115 x 50 x 49mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.32V

GBP 108.47

1

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA, Thyristor Type: SCR, Package Type: TO-247AD, Surge Current Rating: 560A, Mounting Type: Through Hole, Maximum Gate Trigger Voltage: 1.5V, Pin Count: 3, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.64V, Repetitive Peak Off-State Current: 5mA

GBP 3.41

1

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 14.76

1

IXYS CS45-12io1, Thyristor 1200V, 48A 200mA

IXYS CS45-12io1, Thyristor 1200V, 48A 200mA, Thyristor Type: SCR, Package Type: TO-247AD, Surge Current Rating: 560A, Mounting Type: Through Hole, Maximum Gate Trigger Voltage: 1.6V, Maximum Holding Current: 100mA, Pin Count: 3, Length: 16.24mm, Width: 5.3mm, Height: 21.45mm, Dimensions: 16.24 x 5.3 x 21.45mm, Maximum Operating Temperature: +140 °C

GBP 2.65

1

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA, Thyristor Type: SCR Module, Package Type: Y1 CU, Surge Current Rating: 10.1kA, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 2V, Dimensions: 115 x 50 x 49mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.32V

GBP 101.57

1

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 15.21

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 15.11

1

IXYS MCD310-22IO1, Thyristor Module 2100V, 320A 150mA

IXYS MCD310-22IO1, Thyristor Module 2100V, 320A 150mA, Thyristor Type: SCR Module, Package Type: Y2 DCB, Surge Current Rating: 8.6kA, Mounting Type: Panel Mount, Maximum Gate Trigger Voltage: 2V, Dimensions: 116 x 60 x 32mm, Maximum Operating Temperature: +140 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.4V

GBP 109.38

1

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.23mm

GBP 15.70

1

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 15.21

1

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IXYS 140 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA

IXYS N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXFH44N50Q3

IXYS MCMA140PD1600TB, Thyristor Module 1600V, 140A 200mA

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS CS45-08io1, Thyristor 800V, 48A 200mA

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227B IXFN60N80P

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA

IXYS CS45-16IO1, Thyristor 1600V, 48A 100mA

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

IXYS CS45-12io1, Thyristor 1200V, 48A 200mA

IXYS MCD312-16IO1, Thyristor Module 1600V, 320A 150mA

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS MCD310-22IO1, Thyristor Module 2100V, 320A 150mA

IXYS N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227B IXFN48N60P

IXYS N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

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