IXYS N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2
IXYS N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 1.07 kW, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.6mm