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Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

GBP 1.43

1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

GBP 0.11

1

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

GBP 0.50

1

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1, Topology: Half Bridge, Mounting Type: Surface Mount

GBP 1.45

1

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1, Topology: Half Bridge, Mounting Type: Surface Mount

GBP 1.57

1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1, Diode Configuration: Single

GBP 0.12

1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1, Diode Configuration: Single

GBP 0.13

1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1, Diode Configuration: Single, Maximum Clamping Voltage: 13V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: ±3A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Capacitance: 6.5pF, Dimensions: 0.58 x 0.28 x 0.15mm

GBP 0.03

1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1, Diode Configuration: Single, Maximum Clamping Voltage: 13V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: ±3A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Capacitance: 6.5pF, Dimensions: 0.58 x 0.28 x 0.15mm

GBP 0.09

1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1, Diode Configuration: Single, Maximum Clamping Voltage: 13V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: ±3A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Capacitance: 6.5pF, Dimensions: 0.58 x 0.28 x 0.15mm

GBP 0.09

1

Infineon BTS244ZE3062AATMA2, 1, Low-Side Power Switch IC 5-Pin, PG-TO263-5-2

GBP 1.75

1

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0112 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Series: HEXFET

GBP 0.54

1

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0112 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Series: HEXFET

GBP 0.35

1

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC, Fall Time: 30ns, Rise Time: 60ns, Time Delay: 50ns, Bridge Type: Half Bridge, Polarity: Non-Inverting, Automotive Standard: AEC-Q100, Mounting Type: Surface Mount, Height: 1.5mm, Length: 4.98mm

GBP 2.79

1

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC, Fall Time: 30ns, Rise Time: 60ns, Time Delay: 50ns, Bridge Type: Half Bridge, Polarity: Non-Inverting, Automotive Standard: AEC-Q100, Mounting Type: Surface Mount, Height: 1.5mm, Length: 4.98mm

GBP 1.57

1

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 5 x 4 x 1.5mm

GBP 2.39

1

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Through Hole, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 10.92 x 7.11 x 5.33mm, Length: 10.92mm

GBP 2.30

1

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Through Hole, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 10.92 x 7.11 x 5.33mm, Length: 10.92mm

GBP 2.70

1

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Through Hole, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 10.92 x 7.11 x 5.33mm, Length: 10.92mm

GBP 2.24

1

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Through Hole, Input Logic Compatibility: CMOS, LSTTL, Dimensions: 10.92 x 7.11 x 5.33mm, Length: 10.92mm

GBP 2.65

1

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 2.33

1

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 2.61

1

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 1.43

1

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 1.50

1

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC, Topology: High and Low Side, High and Low Sides Dependency: Independent, Polarity: Non-Inverting, Mounting Type: Surface Mount, Input Logic Compatibility: 3.3V, 3V, 5V, CMOS, LSTTL, Dimensions: 5 x 4 x 1.5mm

GBP 2.05

1

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Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

Infineon IFX007TAUMA1 2 8-Pin, PG-TO263-7-1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon ESD200B1CSP0201XTSA1, Bi-Directional TVS Diode, 45W, 2-Pin WLL-2-1

Infineon BTS244ZE3062AATMA2, 1, Low-Side Power Switch IC 5-Pin, PG-TO263-5-2

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

Infineon N-Channel MOSFET, 59 A, 75 V, 3-Pin I-Pak IRFU7746PBF

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC

Infineon AUIR2085STR, MOSFET 2, 1 A, 15V 8-Pin, SOIC

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IRS2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon IR2011PBF, MOSFET 2, 1 A, 20V 8-Pin, PDIP

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon IR2011SPBF, MOSFET 2, 1 A, 20V 8-Pin, SOIC

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