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Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23

Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23

Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 330 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 75 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 300 MHz, Dimensions: 2.9 x 1.3 x 0.9mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.03
1

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 120 V, Maximum Emitter Base Voltage: 5 V, Dimensions: 6.5 x 3.5 x 1.6mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.5 V, Maximum Operating Temperature: +150 °C

GBP 0.55
1

Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23

Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23

Infineon SMBT2222AE6327HTSA1 NPN Bipolar Transistor, 600 mA, 40 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 330 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 75 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 300 MHz, Dimensions: 2.9 x 1.3 x 0.9mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.09
1

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223

Infineon BDP953H6327XTSA1 NPN Transistor, 3 A, 100 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 120 V, Maximum Emitter Base Voltage: 5 V, Dimensions: 6.5 x 3.5 x 1.6mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.5 V, Maximum Operating Temperature: +150 °C

GBP 0.28
1