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Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

GBP 3.77

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

GBP 1.58

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.056 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET

GBP 1.09

1

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.003 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: HEXFET

GBP 4.10

1

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.056 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET

GBP 1.73

1

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.003 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: HEXFET

GBP 1.57

1

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Six Pack

GBP 505.23

1

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Six Pack

GBP 537.31

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 60.77

1

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 54.51

1

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 224.71

1

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Number of Transistors: 6, Transistor Configuration: Six Pack

GBP 272.88

1

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Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon N-Channel MOSFET, 18 A, 150 V, 7-Pin DirectFET Medium Can AUIRF7675M2TR

Infineon N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can AUIRL7736M2TR

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS820R08A6P2BBPSA1 IGBT Module, 820 A 750 V, 20-Pin HYBRID

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS100R12W2T7B11BOMA1 IGBT Module, 100 A 1200 V EASY2B

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

Infineon FS200R12PT4PBOSA1 IGBT Module, 200 A 1200 V, 20-Pin ECONO4

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