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Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6, MPN: BSC094N06LS5ATMA1

GBP 0.81

1

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0134 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Series: OptiMOS, MPN: BSC094N06LS5ATMA1

GBP 0.50

1

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0134 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Series: OptiMOS, MPN: BSC094N06LS5ATMA1

GBP 0.88

1

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 206 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Length: 10.67mm, Width: 4.83mm, Height: 16.51mm, Dimensions: 10.67 x 4.83 x 16.51mm, Energy Rating: 260µJ

GBP 2.86

1

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 206 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 10.67 x 4.83 x 16.51mm, Energy Rating: 260mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.98

1

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 206 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 10.67 x 4.83 x 16.51mm, Energy Rating: 260mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.49

1

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 175 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm

GBP 1.30

1

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 175 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm

GBP 1.60

1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 415 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.95mm

GBP 12.41

1

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 8.77mm

GBP 1.11

1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 415 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.95mm

GBP 14.07

1

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 8.77mm

GBP 0.95

1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 415 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.95mm

GBP 13.78

1

Infineon N-Channel MOSFET Transistor, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon N-Channel MOSFET Transistor, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 175 W, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm, Length: 10mm

GBP 1.06

1

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47, Switch On Resistance: 1.7Ω, Maximum Operating Supply Voltage: 5.5 V, Number of Outputs: 8, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 15.9 x 11 x 3.25mm

GBP 3.39

1

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47, Switch On Resistance: 1.7Ω, Maximum Operating Supply Voltage: 5.5 V, Number of Outputs: 8, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 15.9 x 11 x 3.25mm

GBP 5.41

1

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47, Switch On Resistance: 1.7Ω, Number of Outputs: 8, Voltage: 4.5 → 5.5V, Mounting Type: Surface Mount, Dimensions: 15.9 x 11 x 3.25mm, Length: 15.9mm, Width: 11mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 4.60

1

Infineon, BCR198WH6327XTSA1 PNP Digital Transistor 50 V 47 kΩ, Ratio Of 1, 3-Pin SOT-323 (SC-70)

InfineonXTSA1 PNP Digital Transistor 50 V 47 kΩ, Ratio Of 1, 3-Pin SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 250 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 10 V, Dimensions: 2 x 1.25 x 0.8mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, MPN: BCR198WH6327

GBP 0.02

1

Infineon, BCR148SH6327XTSA1, Dual NPN Digital Transistor 50 V 47 kΩ, Ratio Of 1, 6-Pin SOT-363

InfineonXTSA1, Dual NPN Digital Transistor 50 V 47 kΩ, Ratio Of 1, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 250 mW, Transistor Configuration: Isolated, Maximum Emitter Base Voltage: 10 V, Dimensions: 2 x 1.25 x 0.8mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, MPN: BCR148SH6327

GBP 0.04

1

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.13mm

GBP 2.18

1

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.13mm

GBP 1.85

1

Infineon N-Channel MOSFET, 6.1 A, 550 V, 3-Pin DPAK IPD50R650CEATMA1

Infineon N-Channel MOSFET, 6.1 A, 550 V, 3-Pin DPAK IPD50R650CEATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 650 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.84V, Height: 2.41mm, Length: 6.73mm

GBP 0.66

1

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 47 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16.13mm

GBP 1.69

1

Infineon BCR198WH6327XTSA1 PNP Digital Transistor, 50 V, 3-Pin SOT-323

Infineon BCR198WH6327XTSA1 PNP Digital Transistor, 50 V, 3-Pin SOT-323, Maximum Continuous Collector Current: 100 mA, Typical Input Resistor: 47 kΩ, Mounting Type: Surface Mount, Package Type: SOT-323 (SC-70), Maximum Power Dissipation: 250 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 0.3 V, Dimensions: 2 x 1.25 x 0.8mm, MPN: BCR 198W

GBP 0.02

1

Infineon BCR148WH6327XTSA1 NPN Digital Transistor, 50 V, 3-Pin SOT-323

Infineon BCR148WH6327XTSA1 NPN Digital Transistor, 50 V, 3-Pin SOT-323, Maximum Continuous Collector Current: 100 mA, Typical Input Resistor: 47 kΩ, Mounting Type: Surface Mount, Package Type: SOT-323 (SC-70), Maximum Power Dissipation: 250 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 0.3 V, Dimensions: 2 x 1.25 x 0.8mm, MPN: BCR 148W

GBP 0.06

1

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Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon N-Channel MOSFET, 47 A, 60 V, 8-Pin SuperSO8 5x6

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4630DPBF IGBT, 47 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon N-Channel MOSFET, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET, 47 A, 55 V, 3-Pin TO-220AB IRLZ44NPBF

Infineon N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

Infineon N-Channel MOSFET Transistor, 47 A, 100 V, 3-Pin D2PAK IPB47N10SL26ATMA1

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon TLE7230RAUMA1Low Side, Low Side Power Switch Power Switch IC 36-Pin, DSO-36-47

Infineon, BCR198WH6327XTSA1 PNP Digital Transistor 50 V 47 kΩ, Ratio Of 1, 3-Pin SOT-323 (SC-70)

Infineon, BCR148SH6327XTSA1, Dual NPN Digital Transistor 50 V 47 kΩ, Ratio Of 1, 6-Pin SOT-363

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon N-Channel MOSFET, 6.1 A, 550 V, 3-Pin DPAK IPD50R650CEATMA1

Infineon N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220FP IRFI4410ZPBF

Infineon BCR198WH6327XTSA1 PNP Digital Transistor, 50 V, 3-Pin SOT-323

Infineon BCR148WH6327XTSA1 NPN Digital Transistor, 50 V, 3-Pin SOT-323

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