hummel sko str 33 from GBP 0 | See the cheapest prices and offers on css.nordicadpartner.dk

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

GBP 500.12

1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

GBP 2.77

1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

GBP 636.51

1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1, Maximum Gate Emitter Voltage: +/-20V

GBP 694.37

1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1, Maximum Gate Emitter Voltage: +/-20V

GBP 509.21

1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

GBP 0.37

1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

GBP 4.70

1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 20 mW

GBP 545.58

1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1, Maximum Gate Emitter Voltage: +/-20V, Maximum Power Dissipation: 20 mW

GBP 400.09

1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 2.48

1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 3.02

1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.42

1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.30

1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.74

1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: CoolMOS

GBP 5.12

1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0042 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS

GBP 0.33

1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0042 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS

GBP 0.40

1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: CoolMOS

GBP 3.39

1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm

GBP 1.89

1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm

GBP 1.78

1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm

GBP 1.89

1

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.65mm, Length: 10.67mm

GBP 1.29

1

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 44 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.65mm, Length: 10.67mm

GBP 1.02

1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm

GBP 1.51

1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm

GBP 1.29

1

Vores kunder ligger øverst på Google

Google Ads Specialister fra Vestjylland

Brand

Gender

Merchant

Price (EUR)

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

Infineon FS380R12A6T4BBPSA1 IGBT Module, 760 A 1200 V, 33-Pin AG-HYBRIDD-1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

Infineon FS820R08A6P2LBBPSA1 IGBT Module, 820 A 750 V, 33-Pin AG-HYBRIDD-1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

Infineon N-Channel MOSFET, 33 A, 600 V, 5-Pin ThinPAK 8x8 IPL60R075CFD7AUMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon N-Channel MOSFET, 33 A, 150 V, 8-Pin TDSON BSC360N15NS3GATMA1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

Infineon Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 IPC70N04S5L4R2ATMA1

Infineon Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 IPZ65R065C7XKSA1

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin I2PAK IRFSL5615PBF

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Infineon N-Channel MOSFET, 33 A, 100 V, 3-Pin I2PAK IRF540NLPBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF

Infineon N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 IRFB33N15DPBF

NORDIC AD PARTNER

Powered by Cobiro