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Infineon IR35201MTRPBF, Buck Controller 2-Channel 2 MHz 56-Pin, QFN

GBP 4.02

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

GBP 1.50

1

Infineon IR35201MTRPBF, Buck Controller 2-Channel 2 MHz 56-Pin, QFN

Infineon IR35201MTRPBF, Buck Controller 2-Channel 2 MHz 56-Pin, QFN, Width: 7mm, Mounting Type: Surface Mount

GBP 2.99

1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

GBP 1.99

1

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

GBP 0.41

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.018 Ω, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 1.64

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.018 Ω, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 1.03

1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 4.6V, Series: OptiMOS 5

GBP 1.09

1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 4.6V, Series: OptiMOS 5

GBP 2.17

1

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160000 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 0.37

1

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160000 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 0.45

1

Infineon IRPS5401MTRPBF 5Low Side/High Side, Low Side / High Side Power Switch IC 56-Pin, QFN

Infineon IRPS5401MTRPBF 5Low Side/High Side, Low Side / High Side Power Switch IC 56-Pin, QFN, Switch On Resistance: 45 mO, 105 mO, Maximum Operating Supply Voltage: 12 V, Maximum Operating Current: 0.00009A

GBP 4.20

1

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZPBF

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 6.22mm, Length: 6.73mm

GBP 0.35

1

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.25V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 0.23

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 13.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.30

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 13.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.53

1

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 13.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 143 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.53

1

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252, Mounting Type: Surface Mount, Dimensions: 6.5 x 6.22 x 2.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: CMOS, Length: 6.5mm, Maximum Power Dissipation: 41.6 W

GBP 1.68

1

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252, Mounting Type: Surface Mount, Dimensions: 6.5 x 6.22 x 2.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: CMOS, Length: 6.5mm, Maximum Power Dissipation: 41.6 W

GBP 0.77

1

Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1

Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.74

1

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252, Mounting Type: Surface Mount, Switch Type: High Side, Input Signal Type: CMOS, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Dimensions: 6.5 x 6.22 x 2.3mm, Length: 6.5mm, Maximum Power Dissipation: 41.6 W

GBP 1.50

1

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 15.24mm

GBP 2.61

1

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 380 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 15.24mm

GBP 2.61

1

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.8mm

GBP 1.61

1

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.8mm

GBP 1.62

1

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Infineon IR35201MTRPBF, Buck Controller 2-Channel 2 MHz 56-Pin, QFN

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

Infineon IR35201MTRPBF, Buck Controller 2-Channel 2 MHz 56-Pin, QFN

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK IRFR3710ZTRLPBF

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

Infineon N-Channel MOSFET, 56 A, 150 V, 8-Pin SuperSO8 5x6 BSC160N15NS5ATMA1

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

Infineon Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin D-Pak IRFR2405 IRFR2405TRPBF

Infineon IRPS5401MTRPBF 5Low Side/High Side, Low Side / High Side Power Switch IC 56-Pin, QFN

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZPBF

Infineon N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1

Infineon BTS452RATMA1 Analogue Switch Single 1:1 52 V, 5-Pin TO-252

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

Infineon N-Channel MOSFET, 56 A, 200 V, 3-Pin TO-220AB IRFB260NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

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