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Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 429 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.02mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.98

1

Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 88 W, Transistor Configuration: Single, Length: 10.36mm, Width: 4.57mm, Height: 15.95mm, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.335mJ, Gate Capacitance: 368pF

GBP 0.87

1

Infineon IRGB4620DPBF IGBT, 32 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IRGB4620DPBF IGBT, 32 A 600 V, 3-Pin TO-220AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 140 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Length: 10.67mm, Width: 4.83mm, Height: 16.51mm, Dimensions: 10.67 x 4.83 x 16.51mm, Energy Rating: 280µJ

GBP 2.30

1

Infineon IHW20N120R3FKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IHW20N120R3FKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.65mJ, Gate Capacitance: 1503pF

GBP 1.62

1

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 217 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.5mJ, Gate Capacitance: 875pF

GBP 2.87

1

Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole

Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 105 W, Transistor Configuration: Single, Length: 10.36mm, Width: 4.57mm, Height: 15.95mm, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.17mJ, Gate Capacitance: 930pF

GBP 1.94

1

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.77mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.17

1

Infineon IGW50N60TFKSA1 IGBT, 90 A 600 V, 3-Pin TO-247, Through Hole

Infineon IGW50N60TFKSA1 IGBT, 90 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 3.6mJ, Gate Capacitance: 3140pF

GBP 4.18

1

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.77mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.30

1

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.55mJ, Gate Capacitance: 2960pF

GBP 3.89

1

Infineon IGW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

Infineon IGW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 187 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.1mJ, Gate Capacitance: 1630pF

GBP 2.31

1

Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 306 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.12mJ, Gate Capacitance: 2190pF

GBP 3.14

1

Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 429 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.02mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.90

1

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.07mJ

GBP 2.07

1

Infineon IGW15T120FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IGW15T120FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 4.1mJ, Gate Capacitance: 1100pF

GBP 3.54

1

Infineon IGW25T120FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IGW25T120FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 7mJ, Gate Capacitance: 1860pF

GBP 3.66

1

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Length: 10.36mm, Width: 4.57mm, Height: 15.95mm, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.81mJ, Gate Capacitance: 860pF

GBP 1.60

1

Infineon IKW40N65H5FKSA1 IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65H5FKSA1 IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 0.51mJ, Gate Capacitance: 2500pF

GBP 1.92

1

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 187 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.72mJ, Gate Capacitance: 1630pF

GBP 2.70

1

Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 70 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.28mJ

GBP 2.98

1

Infineon IKW50N65F5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW50N65F5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 0.65mJ, Gate Capacitance: 3000pF

GBP 3.47

1

Infineon IRGP30B60KD-EP IGBT, 60 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP30B60KD-EP IGBT, 60 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 304 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.31mm, Height: 20.7mm, Dimensions: 15.87 x 5.31 x 20.7mm, Energy Rating: 2435µJ

GBP 3.99

1

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.91mJ, Gate Capacitance: 4740pF

GBP 2.96

1

Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 305 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 0.7mJ, Gate Capacitance: 3000pF

GBP 3.09

1

Infineon IHW15N120R3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IHW15N120R3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 254 W, Switching Speed: 60kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.25mJ

GBP 2.50

1

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Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole

Infineon IRGB4620DPBF IGBT, 32 A 600 V, 3-Pin TO-220AB, Through Hole

Infineon IHW20N120R3FKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IGW50N60TFKSA1 IGBT, 90 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole

Infineon IGW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Infineon IGW15T120FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IGW25T120FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKW40N65H5FKSA1 IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

Infineon IKW08T120FKSA1 IGBT, 16 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW50N65F5FKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IRGP30B60KD-EP IGBT, 60 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW15N120R3FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

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