Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220AB SPP20N60C3HKSA1
Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220AB SPP20N60C3HKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 208 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.25mm