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Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

GBP 6.66

1

Infineon 650V 40A, Switching Diode, 3-Pin PG-TO247-3 AIDW40S65C5XKSA1

GBP 5.16

1

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

GBP 5.44

1

Infineon 650V 40A, Switching Diode, 3-Pin PG-TO247-3 AIDW40S65C5XKSA1

Infineon 650V 40A, Switching Diode, 3-Pin PG-TO247-3 AIDW40S65C5XKSA1, Mounting Type: Through Hole, Diode Configuration: Single

GBP 5.63

1

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: 5.7V, Maximum Power Dissipation: 833 W, Transistor Configuration: Single

GBP 5.33

1

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: 5.7V, Maximum Power Dissipation: 833 W, Transistor Configuration: Single

GBP 7.27

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

GBP 7.18

1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

GBP 7.47

1

Infineon N-Channel MOSFET, 483 A, 100 V, 3-Pin TO 247-3 IRF100P218XKMA1

GBP 6.29

1

Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 250 W

GBP 4.56

1

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 428 W

GBP 4.53

1

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 428 W

GBP 5.93

1

Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20.0V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single

GBP 4.78

1

Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3

Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 395 W

GBP 4.55

1

Infineon N-Channel MOSFET, 25 A, 600 V, 3-Pin PG-TO 220-3 IPP60R090CFD7XKSA1

GBP 4.94

1

Infineon N-Channel MOSFET, 18 A, 600 V, 3-Pin PG-TO 247-3 IPW60R125CFD7XKSA1

GBP 4.46

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W

GBP 7.83

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W

GBP 4.57

1

Infineon IKFW60N60DH3EXKSA1 IGBT, 53 A 600 V, 3-Pin PG-TO247-3-AI

Infineon IKFW60N60DH3EXKSA1 IGBT, 53 A 600 V, 3-Pin PG-TO247-3-AI, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 141 W, Transistor Configuration: Isolated

GBP 4.69

1

Infineon Dual N-Channel MOSFET Transistor, 386 A, 650 V, 3-Pin PG-TO 247-3 IPW60R024P7XKSA1

GBP 8.24

1

Infineon Dual N-Channel MOSFET Transistor, 206 A, 650 V, 3-Pin PG-TO 247-3 IPW60R045P7XKSA1

GBP 4.44

1

Infineon Dual N-Channel MOSFET Transistor, 236 A, 650 V, 3-Pin PG-TO 247-3 IPW60R037CSFDXKSA1

GBP 6.27

1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 4.54

1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 8.16

1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 5.40

1

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Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

Infineon 650V 40A, Switching Diode, 3-Pin PG-TO247-3 AIDW40S65C5XKSA1

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

Infineon 650V 40A, Switching Diode, 3-Pin PG-TO247-3 AIDW40S65C5XKSA1

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

Infineon AIKQ120N60CTXKSA1 IGBT 2 V, 3-Pin PG-TO247-3

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

Infineon N-Channel MOSFET, 483 A, 100 V, 3-Pin TO 247-3 IRF100P218XKMA1

Infineon AIKW50N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO263-3

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

Infineon AIKW75N60CTXKSA1 IGBT, 80 A 600 V, 3-Pin PG-TO247-3

Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3

Infineon N-Channel MOSFET, 25 A, 600 V, 3-Pin PG-TO 220-3 IPP60R090CFD7XKSA1

Infineon N-Channel MOSFET, 18 A, 600 V, 3-Pin PG-TO 247-3 IPW60R125CFD7XKSA1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKFW60N60DH3EXKSA1 IGBT, 53 A 600 V, 3-Pin PG-TO247-3-AI

Infineon Dual N-Channel MOSFET Transistor, 386 A, 650 V, 3-Pin PG-TO 247-3 IPW60R024P7XKSA1

Infineon Dual N-Channel MOSFET Transistor, 206 A, 650 V, 3-Pin PG-TO 247-3 IPW60R045P7XKSA1

Infineon Dual N-Channel MOSFET Transistor, 236 A, 650 V, 3-Pin PG-TO 247-3 IPW60R037CSFDXKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

Infineon N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 IMW120R060M1HXKSA1

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