Infineon FP35R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 35 A 1200 V, 23-Pin ECONO2, PCB Mount
Infineon FP35R12KT4B11BOSA1 3 Phase Bridge IGBT Module, 35 A 1200 V, 23-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 210 W, Switching Speed: 1MHz, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: FP35R12KT4_B11