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Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

GBP 1.20

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, MPN: IRF8734TRPBF

GBP 0.72

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, MPN: IRF7831TRPBF

GBP 0.83

1

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can, MPN: AUIRF7640S2TR

GBP 1.08

1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

GBP 0.06

1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 2.6V

GBP 0.06

1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 2.6V

GBP 0.04

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET, MPN: IRF7831TRPBF

GBP 0.51

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.0036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET, MPN: IRF7831TRPBF

GBP 0.90

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0035 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET, MPN: IRF8734TRPBF

GBP 0.79

1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0035 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET, MPN: IRF8734TRPBF

GBP 0.37

1

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.053 Ω, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS 3

GBP 1.31

1

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.053 Ω, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS 3

GBP 0.60

1

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET, MPN: AUIRF7640S2TR

GBP 1.18

1

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.036 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Series: HEXFET, MPN: AUIRF7640S2TR

GBP 0.54

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 1.31

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 1.42

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.67

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 1.24

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 1.34

1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 52 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.60

1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.45mm, Length: 10.36mm

GBP 1.65

1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.45mm, Length: 10.36mm

GBP 2.69

1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 9.45mm, Length: 10.36mm

GBP 1.62

1

Infineon N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK BUZ30AH3045AATMA1

Infineon N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK BUZ30AH3045AATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 0.56

1

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Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

Infineon N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin PG-SOT23-3 BSS127IXTSA1

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 3-Pin DPAK IPD530N15N3GATMA1

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 A, 60 V, 6-Pin DirectFET Small Can

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TSDSON BSZ520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 150 V, 8-Pin TDSON BSC520N15NS3GATMA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220 IPP60R165CPXKSA1

Infineon N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK BUZ30AH3045AATMA1

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