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ROHM Dual N/P-Channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 V, 8-Pin TSMT QS8M51TR

ROHM Dual N/P-Channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 V, 8-Pin TSMT QS8M51TR

ROHM Dual N/P-Channel MOSFET, 1.5 (P Channel) A, 2 (N Channel) A, 100 V, 8-Pin TSMT QS8M51TR, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 355 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 1.5 W, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V, Height: 0.8mm

GBP 0.77
1

ROHM Dual N/P-Channel MOSFET, 6 (N Channel, P Channel) A, 45 V, 8-Pin SOP SH8M24GZETB

ROHM Dual N/P-Channel MOSFET, 6 (N Channel, P Channel) A, 45 V, 8-Pin SOP SH8M24GZETB

ROHM Dual N/P-Channel MOSFET, 6 (N Channel, P Channel) A, 45 V, 8-Pin SOP SH8M24GZETB, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 92 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 3.1 W, Maximum Gate Source Voltage: ±20 V, Height: 1.6mm, Length: 5.2mm

GBP 0.71
1

ROHM Dual N/P-Channel MOSFET, 15 (P Channel) A, 18 (N Channel) A, 30 V, 8-Pin HSOP HP8MA2TB1

ROHM Dual N/P-Channel MOSFET, 15 (P Channel) A, 18 (N Channel) A, 30 V, 8-Pin HSOP HP8MA2TB1

ROHM Dual N/P-Channel MOSFET, 15 (P Channel) A, 18 (N Channel) A, 30 V, 8-Pin HSOP HP8MA2TB1, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 7 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Height: 1.1mm, Length: 5mm

GBP 0.99
1

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 115 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 1.5 W, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V, Height: 0.8mm

GBP 0.16
1

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR

ROHM Dual N/P-Channel MOSFET, 3 (P Channel) A, 4.5 (N Channel) A, 30 V, 8-Pin TSMT QH8MA2TCR, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 115 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (N Channel) V, 2.5 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 1.5 W, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V, Height: 0.8mm

GBP 0.20
1

ROHM Dual N/P-Channel MOSFET, 8.5 (N Channel) A, 8.5 (P Channel) A, 60 V, 8-Pin HSOP HP8M31TB1

ROHM Dual N/P-Channel MOSFET, 8.5 (N Channel) A, 8.5 (P Channel) A, 60 V, 8-Pin HSOP HP8M31TB1

ROHM Dual N/P-Channel MOSFET, 8.5 (N Channel) A, 8.5 (P Channel) A, 60 V, 8-Pin HSOP HP8M31TB1, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 73 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3 (N Channel) V, 3 (P Channel) V, Minimum Gate Threshold Voltage: 1 (N Channel) V, 1 (P Channel) V, Maximum Power Dissipation: 7 W, Maximum Gate Source Voltage: ±20 V, ±20 V, Height: 1.1mm, Length: 5mm

GBP 1.30
1

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 30 V, 8-Pin SOP SH8MA2GZETB

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 30 V, 8-Pin SOP SH8MA2GZETB

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 30 V, 8-Pin SOP SH8MA2GZETB, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2 (Tr1) V, 2 (Tr2) V, Minimum Gate Threshold Voltage: 1 (Tr1) V, 1 (Tr2) V, Maximum Power Dissipation: 2.7 W, Maximum Gate Source Voltage: ±20 (Tr1, Tr2) V, Forward Diode Voltage: 1.2V, Height: 1.6mm

GBP 0.39
1

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 60 V, 8-Pin SOP SH8M31GZETB

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 60 V, 8-Pin SOP SH8M31GZETB

ROHM Dual N/P-Channel MOSFET, 4.5 (Tr1, Tr2) A, 60 V, 8-Pin SOP SH8M31GZETB, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3 (Tr1) V, 3 (Tr2) V, Minimum Gate Threshold Voltage: 1 (Tr1) V, 1 (Tr2) V, Maximum Power Dissipation: 2 W, Maximum Gate Source Voltage: ±20 (Tr1, Tr2) V, Forward Diode Voltage: 1.2V, Height: 1.6mm

GBP 1.04
1