STMicroelectronics STGWA30M65DF2 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole
STMicroelectronics STGWA30M65DF2 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 258 W, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 2.03mJ, Gate Capacitance: 2490pF