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STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO, Maximum Operating Supply Voltage: 36 V, Maximum Operating Current: 1A, Mounting Type: Surface Mount, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 9.47 x 9.59 x 3.3mm, Minimum Input Voltage: 10 V

GBP 3.37

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1

GBP 3.39

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.36

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.16

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.36

1

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.24

1

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.78

1

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.46

1

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.54

1

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.52

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 1.63

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 4.02

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 1.66

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 4.02

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 3.58

1

STMicroelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 76V, Minimum Breakdown Voltage: 36.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33V, Maximum Peak Pulse Current: 789A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 1.95

1

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 76V, Minimum Breakdown Voltage: 36.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33V, Maximum Peak Pulse Current: 789A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 2.66

1

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 76V, Minimum Breakdown Voltage: 36.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33V, Maximum Peak Pulse Current: 789A, Number of Elements per Chip: 1, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 2.49

1

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN, Switch On Resistance: 33 mO, 90 mO, Maximum Operating Supply Voltage: 28 V, Maximum Operating Current: 31.5A

GBP 1.18

1

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN, Switch On Resistance: 33 mO, 90 mO, Maximum Operating Supply Voltage: 28 V, Maximum Operating Current: 31.5A

GBP 1.61

1

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin D2PAK STB40NF10LT4

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin D2PAK STB40NF10LT4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 4.6mm

GBP 0.27

1

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -17 V, +17 V, Height: 9.15mm

GBP 2.39

1

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -17 V, +17 V, Height: 9.15mm

GBP 2.02

1

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -17 V, +17 V, Height: 9.15mm

GBP 2.04

1

STMicroelectronics N-Channel MOSFET, 5 A, 200 V, 3-Pin DPAK STD5N20LT4

STMicroelectronics N-Channel MOSFET, 5 A, 200 V, 3-Pin DPAK STD5N20LT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 700 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 0.49

1

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STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247 STW36N55M5

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STP36N55M5

STMicroelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics ST Microelectronics BZW50-33, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN

STMicroelectronics VN9D30Q100FTR 6High Side, High Side Power Switch IC, QFN

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin D2PAK STB40NF10LT4

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STP40NF10L

STMicroelectronics N-Channel MOSFET, 5 A, 200 V, 3-Pin DPAK STD5N20LT4

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