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STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 11.34

1

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 12.87

1

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 11.83

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 8.97

1

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 10.41

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.16

1

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 11.33

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.48

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.20

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.56

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.65

1

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 42 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.67

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.78

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.16

1

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STW56N65DM2

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STW56N65DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.87

1

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Height: 20.15mm

GBP 9.99

1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.13

1

STMicroelectronics Set of ST25TA and ST25TV Series NFC Tags ST25TA, ST25TV Evaluation Base Board for ST25T Product

STMicroelectronics Set of ST25TA and ST25TV Series NFC Tags ST25TA, ST25TV Evaluation Base Board for ST25T Product, Classification: Accessory, For Use With: ST25T Product Family, MPN: ST25-TAG-BAG-UB

GBP 16.52

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.3mm, Height: 20.3mm, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C

GBP 10.11

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.70

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 11.00

1

STMicroelectronics BUTW92 NPN Transistor, 60 A, 250 V, 3-Pin TO-247

STMicroelectronics BUTW92 NPN Transistor, 60 A, 250 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 500 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 20.3 x 15.9 x 5.3mm, Height: 20.3mm, Length: 15.9mm

GBP 9.91

1

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 270 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +25 V, Forward Diode Voltage: 3.5V, Height: 20.15mm, Length: 15.75mm

GBP 16.93

1

STMicroelectronics N-Channel MOSFET, 8 A, 28 V, 10-Pin PowerSO PD85050S

STMicroelectronics N-Channel MOSFET, 8 A, 28 V, 10-Pin PowerSO PD85050S, Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 105 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 3.6mm, Length: 15.65mm

GBP 13.60

1

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 270 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +25 V, Forward Diode Voltage: 3.5V, Height: 20.15mm, Length: 15.75mm

GBP 16.72

1

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STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 69 A, 650 V, 3-Pin TO-247 STW77N65M5

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 66 A, 600 V, 3-Pin TO-247 STW70N60DM2

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STW56N65DM2

STMicroelectronics N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 STW48NM60N

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics Set of ST25TA and ST25TV Series NFC Tags ST25TA, ST25TV Evaluation Base Board for ST25T Product

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics BUTW92 NPN Transistor, 60 A, 250 V, 3-Pin TO-247

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120

STMicroelectronics N-Channel MOSFET, 8 A, 28 V, 10-Pin PowerSO PD85050S

STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120

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