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STMicroelectronics VNH3SP30TR-E, Brushed Motor Driver IC, 40 V 30A 30-Pin, MultiPowerSO

STMicroelectronics VNH3SP30TR-E, Brushed Motor Driver IC, 40 V 30A 30-Pin, MultiPowerSO

STMicroelectronics VNH3SP30TR-E, Brushed Motor Driver IC, 40 V 30A 30-Pin, MultiPowerSO, Motor Type: Brushed DC, Output Configuration: Full Bridge, Mounting Type: Surface Mount, Maximum Operating Supply Voltage: 36 V, Minimum Operating Supply Voltage: 5.5 V, Typical Switching Frequency: 10kHz, Automotive Standard: AEC-Q100, Dimensions: 17.2 x 16 x 2.25mm, Length: 17.2mm, Maximum Operating Temperature: +150 °C

GBP 8.89
1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.48
1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.13
1

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6

STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6, Mounting Type: Through Hole, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V, Minimum Gate Threshold Voltage: 3.25V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.16
1