STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Length: 15.75mm, Width: 5.15mm, Height: 24.45mm, Dimensions: 15.75 x 5.15 x 24.45mm, Energy Rating: 1435µJ, Gate Capacitance: 2170pF