STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7 STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7 GBP 12.90 1
STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7 STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7 GBP 23.11 1
STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7 GBP 26.30 1
STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7 GBP 10.74 1
STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7 STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.21 O, Maximum Gate Threshold Voltage: 4.9V GBP 21.80 1
STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7 STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V GBP 8.21 1
STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7 STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V GBP 14.63 1
STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7 STMicroelectronics MOSFET, 90 A, 1200 V, 7-Pin H?PAK-7 SCTH70N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.21 O, Maximum Gate Threshold Voltage: 4.9V GBP 26.23 1
STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V GBP 27.98 1
STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V GBP 18.06 1
STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1 GBP 7.60 1
STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7 STMicroelectronics SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H²PAK-7 SCTH35N65G2V-7, Maximum Drain Source Resistance: 0.055 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.2V, Number of Elements per Chip: 1 GBP 11.43 1
STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG GBP 7.66 1
STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7 STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7 GBP 25.03 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG GBP 29.54 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG GBP 12.81 1
STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG GBP 22.60 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V GBP 10.96 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V GBP 30.14 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V GBP 16.48 1
STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V GBP 22.83 1
STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V GBP 8.36 1
STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG STMicroelectronics Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.067 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V GBP 7.74 1
STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7 STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V GBP 19.23 1
STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7 STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V GBP 28.41 1