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STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220, MPN: STO67N60DM6

GBP 5.52

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

GBP 12.90

1

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

GBP 5.75

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

GBP 16.71

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

GBP 29.54

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

GBP 12.81

1

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6, Maximum Drain Source Resistance: 0.091 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V

GBP 5.78

1

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6, Maximum Drain Source Resistance: 0.091 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.75V

GBP 6.69

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 14.63

1

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.105 O, Maximum Gate Threshold Voltage: 5V

GBP 8.21

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1, Series: STO67N60DM6

GBP 6.40

1

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO, Maximum Operating Supply Voltage: 36 V, Maximum Operating Current: 1A, Mounting Type: Surface Mount, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 9.47 x 9.59 x 3.3mm, Minimum Input Voltage: 10 V

GBP 3.37

1

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO, Maximum Operating Supply Voltage: 36 V, Maximum Operating Current: 1A, Mounting Type: Surface Mount, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Dimensions: 9.47 x 9.59 x 3.3mm, Minimum Input Voltage: 10 V

GBP 5.39

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 17.05

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 15.02

1

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6, Maximum Drain Source Resistance: 59 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 25V, Number of Elements per Chip: 1

GBP 3.39

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 30.14

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 10.96

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 22.83

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 16.48

1

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO, Operation: Autoswitching, Maximum Output Current: 1A, Mounting Type: Surface Mount, Dimensions: 9.47 x 9.59 x 3.3mm, Length: 9.47mm, Width: 9.59mm, Maximum Input Voltage: 36 V, Maximum Operating Temperature: +125 °C, Minimum Input Voltage: 10 V, Minimum Operating Temperature: -40 °C

GBP 5.07

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.36

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.16

1

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 69.7V, Minimum Breakdown Voltage: 37.1V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 33.3V, Maximum Peak Pulse Current: 57A, Maximum Operating Temperature: +175 °C, Capacitance: 900pF, Diameter: 3.53mm, Dimensions: 3.53 (Dia.) x 6.75mm

GBP 0.36

1

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.24

1

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STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics MOSFET, 33 A, 1200 V, 7-Pin H?PAK-7 SCTH40N120G2V-7

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 SCTW40N120G2VAG

STMicroelectronics N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG

STMicroelectronics VN340SPTR-33-E Power Switch IC 10-Pin, SO

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics BZW06-33, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

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