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Toshiba Canvio Basics 500 GB External Hard Drive

Toshiba Canvio Basics 500 GB External Hard Drive, Hard Drive Type: HDD, Dimensions: 78 x 109 x 14mm, Length: 78mm, Width: 109mm, MPN: HDTB405EK3AA

GBP 55.35

1

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L)

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.2mm

GBP 0.11

1

Toshiba Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP

Toshiba Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP, Mounting Type: Through Hole, Maximum Collector Emitter Saturation Voltage: 1.6 V, Dimensions: 24.6 x 6.4 x 3.5mm, Length: 24.6mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Width: 6.4mm, MPN: TD62084AP

GBP 0.85

1

Toshiba Octal NPN + PNP Darlington Transistor Array, 500 mA, 20-Pin PDIP

Toshiba Octal NPN + PNP Darlington Transistor Array, 500 mA, 20-Pin PDIP, Maximum Emitter Base Voltage: -2.8 V, Mounting Type: Through Hole, Maximum Collector Emitter Saturation Voltage: 2 V, Dimensions: 25.1 x 6.4 x 3.5mm, Length: 25.1mm, Maximum Operating Temperature: +85 °C, Maximum Power Dissipation: 1.38 W, Minimum Operating Temperature: -40 °C, Width: 6.4mm, MPN: TD62386AP

GBP 1.25

1

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin SSM SSM3K36FS(TE85L,F)

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin SSM SSM3K36FS(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.6mm

GBP 0.11

1

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 200 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.9mm, Length: 2mm

GBP 0.04

1

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 19mm, Length: 40.5mm

GBP 2.45

1

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 19mm, Length: 40.5mm

GBP 2.43

1

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 200 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.9mm, Length: 2mm

GBP 0.04

1

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 200 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.9mm, Length: 2mm

GBP 0.04

1

Toshiba 7-element NPN Darlington Pair, 500 mA 50 V HFE:1000, 16-Pin PDIP

Toshiba 7-element NPN Darlington Pair, 500 mA 50 V HFE:1000, 16-Pin PDIP, Mounting Type: Through Hole, Maximum Collector Emitter Saturation Voltage: 1.6 V, Dimensions: 19.25 x 6.4 x 3.5mm, Length: 19.25mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Width: 6.4mm, MPN: TD62003AP

GBP 0.45

1

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.12

1

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.12

1

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 30 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.65

1

Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.4V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 35 W @ 25 °C, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Forward Diode Voltage: -1.7V

GBP 0.28

1

Toshiba N-Channel MOSFET, 18.5 A, 500 V, 3-Pin TO-220SIS TK19A50W,S5X(M

Toshiba N-Channel MOSFET, 18.5 A, 500 V, 3-Pin TO-220SIS TK19A50W,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 40 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 1.29

1

Toshiba 2SC3325-Y(F) NPN Transistor, 500 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC3325-Y(F) NPN Transistor, 500 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 300 MHz, Number of Elements per Chip: 1, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +150 °C

GBP 0.09

1

Toshiba N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK TK3P50D,RQ(S

Toshiba N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK TK3P50D,RQ(S, Package Type: DPAK (TO-252), Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.4V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.7V

GBP 0.83

1

Toshiba 2SA1182-Y(TE85L,F) PNP Transistor, 500 mA, 30 V, 3-Pin SOT-346

Toshiba 2SA1182-Y(TE85L,F) PNP Transistor, 500 mA, 30 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -35 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.11

1

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Maximum Forward Voltage: 1.75V, Typical Rise Time: 0.5ms, Maximum Input Current: 500 mA, Isolation Voltage: 5000 Vrms, Typical Fall Time: 0.2ms, MPN: TLP220A

GBP 2.02

1

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Maximum Forward Voltage: 1.75V, Typical Rise Time: 0.5ms, Maximum Input Current: 500 mA, Isolation Voltage: 5000 Vrms, Typical Fall Time: 0.2ms, MPN: TLP220A

GBP 2.36

1

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Maximum Forward Voltage: 1.75V, Typical Rise Time: 0.5ms, Maximum Input Current: 500 mA, Isolation Voltage: 5 kVrms, Typical Fall Time: 0.2ms, MPN: TLP220A

GBP 1.61

1

Toshiba TC74HC151AP(F) Multiplexer Single 8:1, 16-Pin PDIP

Toshiba TC74HC151AP(F) Multiplexer Single 8:1, 16-Pin PDIP, Mounting Type: Through Hole, Dimensions: 19.25 x 6.4 x 3.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 19.25mm, Maximum Power Dissipation: 500 mW, Width: 6.4mm

GBP 0.39

1

Toshiba TC74HC157AP(F) Multiplexer Quad 2:1, 16-Pin PDIP

Toshiba TC74HC157AP(F) Multiplexer Quad 2:1, 16-Pin PDIP, Mounting Type: Through Hole, Dimensions: 19.25 x 6.4 x 3.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 19.25mm, Maximum Power Dissipation: 500 mW, Width: 6.4mm

GBP 0.71

1

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 66 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.35V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Height: 0.7mm

GBP 0.13

1

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Toshiba Canvio Basics 500 GB External Hard Drive

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L)

Toshiba Octal NPN Darlington Pair, 500 mA 50 V HFE:1000, 18-Pin PDIP

Toshiba Octal NPN + PNP Darlington Transistor Array, 500 mA, 20-Pin PDIP

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin SSM SSM3K36FS(TE85L,F)

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

Toshiba 7-element NPN Darlington Pair, 500 mA 50 V HFE:1000, 16-Pin PDIP

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

Toshiba Dual N/P-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563 SSM6L36FE

Toshiba N-Channel MOSFET, 9.7 A, 500 V, 3-Pin TO-220SIS TK10A50W,S5X(M

Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

Toshiba N-Channel MOSFET, 18.5 A, 500 V, 3-Pin TO-220SIS TK19A50W,S5X(M

Toshiba 2SC3325-Y(F) NPN Transistor, 500 mA, 50 V, 3-Pin SOT-346

Toshiba N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK TK3P50D,RQ(S

Toshiba 2SA1182-Y(TE85L,F) PNP Transistor, 500 mA, 30 V, 3-Pin SOT-346

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba, TLP220A AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP

Toshiba TC74HC151AP(F) Multiplexer Single 8:1, 16-Pin PDIP

Toshiba TC74HC157AP(F) Multiplexer Quad 2:1, 16-Pin PDIP

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

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