Toshiba N-Channel MOSFET, 21 A, 60 V, 8-Pin TSON TPN22006NH,LQ(S
Toshiba N-Channel MOSFET, 21 A, 60 V, 8-Pin TSON TPN22006NH,LQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 18 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V