Toshiba N-Channel MOSFET, 3.5 A, 600 V, 3-Pin TO-220SIS TK4A60DA(STA4,Q,M)
Toshiba N-Channel MOSFET, 3.5 A, 600 V, 3-Pin TO-220SIS TK4A60DA(STA4,Q,M), Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.4V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 35 W @ 25 °C, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: -1.7V