Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L
Toshiba P-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK TJ40S04M3L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +10 V, Automotive Standard: AEC-Q101