Vishay P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
Vishay P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.78mm, Length: 3.3mm