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Vishay Wirewound Resistor 40 Ohms, Resistance: 40Ω, Power Rating: 25W, Series: RH, Package/Case: Aluminium Housed, Tolerance: ±1%, Technology: Wire Wound, Termination Style: Axial, Minimum Operating Temperature: -55°C, Maximum Operating Temperature: +250°C, Minimum Temperature Coefficient: -20ppm/°C, Maximum Temperature Coefficient: +20ppm/°C, Dimensions: 26.97 x 27.43 x 13.87mm, MPN: RH02540R00FE02

GBP 3.06

1

Vishay DG333ADW-E3 Analogue Switch Quad SPDT 5 to 40 V, 20-Pin SOIC

Vishay DG333ADW-E3 Analogue Switch Quad SPDT 5 to 40 V, 20-Pin SOIC, Mounting Type: Surface Mount, Typical Single Supply Voltage: 5 → 40 V, Power Supply Type: Dual, Single, Input Signal Type: Single Ended, Typical Dual Supply Voltage: ±4 → ±22V, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Dimensions: 0.504 x 0.295 x 0.091in, Height: 2.31mm

GBP 3.15

1

Vishay DG333ALDW-E3 Analogue Switch Quad SPDT 5 to 40 V, 20-Pin SOIC

Vishay DG333ALDW-E3 Analogue Switch Quad SPDT 5 to 40 V, 20-Pin SOIC, Mounting Type: Surface Mount, Typical Single Supply Voltage: 5 → 40 V, Power Supply Type: Dual, Single, Input Signal Type: Single Ended, Typical Dual Supply Voltage: ±4 → ±22V, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Dimensions: 0.504 x 0.295 x 0.091in, Height: 2.31mm

GBP 3.18

1

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 W, 48 W, 60 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3

GBP 1.11

1

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 W, 48 W, 60 W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3

GBP 1.09

1

Vishay Resistor; Wirewound; 40 Kilohms; 5 W @ degC; 5%; Axial Leaded; 1000 VAC

Vishay Resistor; Wirewound; 40 Kilohms; 5 W @ degC; 5%; Axial Leaded; 1000 VAC, MPN: CW00540K00JE12

GBP 0.85

1

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Vishay 3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40, Channel Type: N, P, Maximum Drain Source Voltage: 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, Package Type: Triple Die, Mounting Type: Surface Mount, Pin Count: 10, Maximum Drain Source Resistance: 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V, Minimum Gate Threshold Voltage: 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V, Maximum Power Dissipation: 48 (Channel 1) W, 48 (Channel 2) W, 60 (Channel 3) W, Transistor Configuration: Common Drain, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101, MPN: SQUN702E-T1_GE3

GBP 2.03

1

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