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onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 mΩ, 530 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.5mm, Length: 1.6mm

GBP 0.73
1

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 mΩ, 530 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.5mm, Length: 1.6mm

GBP 0.60
1

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT

onsemi Dual N/P-Channel-Channel MOSFET, 2.6 A, 3.8 A, 20 V, 6-Pin MicroFET Thin FDME1034CZT, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 mΩ, 530 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.5mm, Length: 1.6mm

GBP 0.26
1