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onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.34

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 0.61

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.34

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 121 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.1mm

GBP 1.20

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 121 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.1mm

GBP 1.07

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 121 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.1mm

GBP 1.34

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.82

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 1.55

1

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 83 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 1.84

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 9.19mm, Length: 10.16mm

GBP 1.74

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 9.19mm, Length: 10.16mm

GBP 1.47

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 9.19mm, Length: 10.16mm

GBP 1.51

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.38mm, Length: 6.73mm

GBP 0.69

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.38mm, Length: 6.73mm

GBP 0.45

1

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLG

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLG, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.38mm, Length: 6.73mm, MPN: NTD5865NLT4G

GBP 0.27

1

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN, Mounting Type: Surface Mount, Dimensions: 6 x 6 x 0.95mm, Maximum Operating Temperature: +100 °C, Minimum Operating Temperature: -40 °C

GBP 1.16

1

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN, Mounting Type: Surface Mount, Dimensions: 6 x 6 x 0.95mm, Maximum Operating Temperature: +100 °C, Minimum Operating Temperature: -40 °C

GBP 2.25

1

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP, Mounting Type: Surface Mount, Dimensions: 14 x 6.1 x 0.9mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Differential, Length: 14mm, Multiplexer Architecture: 2:1

GBP 0.58

1

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP, Mounting Type: Surface Mount, Dimensions: 14 x 6.1 x 0.9mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Differential, Length: 14mm, Multiplexer Architecture: 2:1

GBP 0.56

1

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN, Mounting Type: Surface Mount, Dimensions: 6 x 6 x 0.95mm, Length: 6mm, Maximum Operating Temperature: +100 °C, Minimum Operating Temperature: -40 °C

GBP 1.91

1

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP, Transmission Data Rate: 2.38Gbps, Number of Elements per Chip: 4, Mounting Type: Surface Mount, Differential Input Low Threshold Voltage: -100mV, Dimensions: 14 x 6.1 x 1mm, Length: 14mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C

GBP 4.14

1

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP, Transmission Data Rate: 2.38Gbps, Number of Elements per Chip: 4, Mounting Type: Surface Mount, Differential Input Low Threshold Voltage: -100mV, Dimensions: 14 x 6.1 x 1mm, Length: 14mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C

GBP 3.93

1

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP, Transmission Data Rate: 2.38Gbps, Number of Elements per Chip: 4, Mounting Type: Surface Mount, Differential Input High Threshold Voltage: 100mV, Differential Input Low Threshold Voltage: -100mV, Dimensions: 14 x 6.1 x 1mm, Length: 14mm, Maximum Operating Supply Voltage: 3.6 V

GBP 2.09

1

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP, Transmission Data Rate: 2.38Gbps, Number of Elements per Chip: 4, Mounting Type: Surface Mount, Differential Input High Threshold Voltage: 100mV, Differential Input Low Threshold Voltage: -100mV, Dimensions: 14 x 6.1 x 1mm, Length: 14mm, Maximum Operating Supply Voltage: 3.6 V

GBP 2.20

1

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP, Mounting Type: Surface Mount, Typical Single Supply Voltage: 4 → 5.5 V, Input Signal Type: Differential, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Dimensions: 14 x 6.1 x 0.9mm, Length: 14mm, Multiplexer Architecture: 2:1

GBP 1.07

1

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onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin D2PAK FQB50N06LTM

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin TO-220AB FQP50N06L

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 52 A, 60 V, 3-Pin DPAK FDD5670

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin TO-220F FQPF65N06

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLT4G

onsemi N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK NTD5865NLG

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

onsemi NCP81245MNTXG DC-DC, Phase Controller 1200 kHz 52-Pin, QFN

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3386MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FIN3385MTDX, LVDS Serdes 28 LVTTL LVDS, 56-Pin TSSOP

onsemi FST16233MTDX Multiplexer/Demultiplexer 4 to 5.5 V, 56-Pin TSSOP

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