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onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP

onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP, Logic Function: Clock Driver, Operation Mode: Differential, Mounting Type: Surface Mount, Dimensions: 10 x 10 x 1.5mm, Length: 10mm, Maximum Operating Supply Voltage: 5.25 V, Maximum Operating Temperature: +85 °C

GBP 5.40

1

onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP

onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP, Logic Function: Clock Driver, Operation Mode: Differential, Mounting Type: Surface Mount, Dimensions: 10 x 10 x 1.5mm, Length: 10mm, Maximum Operating Supply Voltage: 5.25 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: -3 V

GBP 7.00

1

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 481 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 5.80

1

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 481 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 4.93

1

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 72 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 481 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 5.01

1

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW NTMTS001N06CLTXG

onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW NTMTS001N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.05 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 5.13

1

onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW NVMTS0D7N06CLTXG

onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW NVMTS0D7N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 294.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 4.82

1

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 2.5 V, Maximum Operating Temperature: +200 °C

GBP 5.40

1

onsemi 2N3055AG NPN Transistor, 15 A, 60 V, 2-Pin TO-204AA

onsemi 2N3055AG NPN Transistor, 15 A, 60 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 100 V, Maximum Emitter Base Voltage: 7 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 5 V, Maximum Operating Temperature: +200 °C

GBP 5.31

1

onsemi 2N3055G NPN Transistor, 15 A, 60 V, 3-Pin TO-204

onsemi 2N3055G NPN Transistor, 15 A, 60 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 100 V, Maximum Emitter Base Voltage: 7 V, Maximum Operating Frequency: 2.5 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +200 °C

GBP 5.35

1

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 21.08 (Dia.) x 8.51mm

GBP 5.77

1

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Energy Rating: 50mJ, Gate Capacitance: 3813pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.69

1

onsemi FND43060T2, AC Induction, BLDC Motor, PMSM Motor Motor Driver IC, 600 V 30 A, 60 A 26-Pin, SPMAA-J

onsemi FND43060T2, AC Induction, BLDC Motor, PMSM Motor Motor Driver IC, 600 V 30 A, 60 A 26-Pin, SPMAA-J, Output Configuration: 3 Phase, Maximum Output Current: 1 (Fault)mA, Maximum Supply Voltage: 400 V, Mounting Type: Through Hole, Typical Switching Frequency: 20 (Maximum PWM)kHz, Maximum Isolation Rating: 4000Vrms, Series: Motion SPM 45, Dimensions: 39.5 x 23.5 x 4.8mm

GBP 8.73

1

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onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP

onsemi MC100LVE222FAG, Clock Generator LVECL, LVPECL, 2-Input, 52-Pin LQFP

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi N-Channel MOSFET, 52 A, 600 V, 3-Pin TO-247 FCH072N60F

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW NTMTS001N06CLTXG

onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW NVMTS0D7N06CLTXG

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA

onsemi 2N3055AG NPN Transistor, 15 A, 60 V, 2-Pin TO-204AA

onsemi 2N3055G NPN Transistor, 15 A, 60 V, 3-Pin TO-204

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

onsemi FND43060T2, AC Induction, BLDC Motor, PMSM Motor Motor Driver IC, 600 V 30 A, 60 A 26-Pin, SPMAA-J

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