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onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 4.81

1

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 6.07

1

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 6.45

1

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 350 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 4 MHz, Dimensions: 8.51 x 39.37 x 26.67mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 4.57

1

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.11

1

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.13

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.44

1

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.85

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.81

1

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.11

1

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 4.69

1

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 32 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 18.9mm, Length: 15.8mm

GBP 4.69

1

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 4 V, Dimensions: 21.08 (Dia.) x 8.51mm

GBP 5.77

1

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm

GBP 6.63

1

onsemi MJ15001G NPN Transistor, 15 A, 140 V, 2-Pin TO-204AA

onsemi MJ15001G NPN Transistor, 15 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 1 V, Maximum Operating Temperature: +200 °C

GBP 5.40

1

onsemi 2N5886G NPN Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi 2N5886G NPN Transistor, 25 A, 80 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 2.5 V, Maximum Operating Temperature: +200 °C

GBP 5.24

1

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 2.5 V, Maximum Operating Temperature: +200 °C

GBP 5.92

1

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 2.5 V, Maximum Operating Temperature: +200 °C

GBP 5.40

1

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 2.5 V, Maximum Operating Temperature: +200 °C

GBP 4.44

1

onsemi MJ15015G NPN Transistor, 15 A, 120 V, 2-Pin TO-204

onsemi MJ15015G NPN Transistor, 15 A, 120 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 200 V, Maximum Emitter Base Voltage: 7 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 5 V, Maximum Operating Temperature: +200 °C

GBP 5.13

1

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 100 V, Maximum Emitter Base Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.8 V, Maximum Operating Temperature: +200 °C

GBP 6.06

1

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 100 V, Maximum Emitter Base Voltage: 4 V, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.8 V, Maximum Operating Temperature: +200 °C

GBP 4.53

1

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 4.48

1

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 5.27

1

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 2 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 1 V, Maximum Operating Temperature: +200 °C

GBP 4.44

1

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onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15023G PNP Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ15022G NPN Transistor, 16 A, 200 V, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20

onsemi N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-3PN FQA65N20

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

onsemi MJ15001G NPN Transistor, 15 A, 140 V, 2-Pin TO-204AA

onsemi 2N5886G NPN Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi 2N5885G NPN Transistor, 25 A, 60 V, 2-Pin TO-204AA

onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA

onsemi MJ15015G NPN Transistor, 15 A, 120 V, 2-Pin TO-204

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA

onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G

onsemi N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN NTMFS6H800NT1G

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

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