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onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

GBP 1.00

1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

GBP 8.37

1

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.031 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 0.92

1

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.031 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 1.18

1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 8.56

1

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 9.71

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.13 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.83

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.13 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.06

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.13 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 2.16

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 18 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.1mm

GBP 2.06

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 18 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.1mm

GBP 1.71

1

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 18 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.4mm, Length: 10.1mm

GBP 1.74

1

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS, Classification: Adapter Board

GBP 53.24

1

onsemi API Development Kit RCZ1 SigFox Evaluation Base Board for RCZ1 DVK-SFEU-API-1-GEVK

GBP 82.19

1

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,, For Use With: NCP51705SMDGEVB, SECO-NCD5700-GEVB, SECO-NCD57000-GEVB, SECO-NCP51530HB-GEVB

GBP 343.88

1

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Height: 16.07mm, Length: 10.36mm

GBP 1.67

1

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +30 V, Height: 16.07mm, Length: 10.36mm

GBP 1.96

1

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 97 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm

GBP 0.67

1

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 97 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm

GBP 0.81

1

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 97 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm

GBP 0.34

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.16mm

GBP 0.52

1

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.36mm

GBP 0.64

1

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 31 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.19mm, Length: 10.16mm

GBP 1.17

1

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 107 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm, Length: 4mm

GBP 1.22

1

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 107 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 31 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm, Length: 4mm

GBP 0.64

1

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onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

onsemi N-Channel MOSFET, 31 A, 150 V, 8-Pin PQFN8 NTMFS034N15MC

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB FQP34N20

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS

onsemi API Development Kit RCZ1 SigFox Evaluation Base Board for RCZ1 DVK-SFEU-API-1-GEVK

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60

onsemi N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220F FCPF400N60

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN FDMS8622

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi N-Channel MOSFET, 10.2 A, 600 V, 3-Pin TO-220F FCPF380N60E

onsemi N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220F FCPF7N60

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141

onsemi Dual N-Channel MOSFET, 3.5 A, 100 V, 8-Pin SOIC FDS89141

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