north face base camp small from GBP 0 | See the cheapest prices and offers on css.nordicadpartner.dk

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS, Classification: Adapter Board

GBP 53.24

1

onsemi API Development Kit RCZ1 SigFox Evaluation Base Board for RCZ1 DVK-SFEU-API-1-GEVK

GBP 82.19

1

onsemi Small Signal Diode, 300mA 100V, 2-Pin DO-35 1N4148

onsemi Small Signal Diode, 300mA 100V, 2-Pin DO-35 1N4148, Diode Configuration: Single, Mounting Type: Through Hole, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1V, Maximum Diode Capacitance: 4pF, Maximum Operating Temperature: +175 °C, Height: 4.56mm, Dimensions: 1.91 (Dia.) x 4.56mm, Diameter: 1.91mm

GBP 0.02

1

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,, For Use With: NCP51705SMDGEVB, SECO-NCD5700-GEVB, SECO-NCD57000-GEVB, SECO-NCP51530HB-GEVB

GBP 343.88

1

onsemi BUV26G NPN Transistor, 20 A, 90 V, 3-Pin TO-220

onsemi BUV26G NPN Transistor, 20 A, 90 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 180 V dc, Maximum Emitter Base Voltage: 7 V, Dimensions: 10.28 x 4.82 x 15.75mm, Length: 10.28mm, Maximum Base Emitter Saturation Voltage: 2 V dc

GBP 0.69

1

onsemi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH

onsemi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH, Mounting Type: Surface Mount, Maximum Power Dissipation: 900 mW, Transistor Configuration: Common Base, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Number of Elements per Chip: 2, Dimensions: 2.9 x 1.6 x 0.9mm, Maximum Base Emitter Saturation Voltage: 1.2 (NPN) V, -1.2 (PNP) V, Maximum Collector Emitter Saturation Voltage: 190 (NPN) mV, -430 (PNP) mV

GBP 0.03

1

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204, Maximum Emitter Base Voltage: -50 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: -3.8 V, Maximum Collector Base Voltage: -250 V, Maximum Collector Emitter Saturation Voltage: -3.4 V, Dimensions: 21.08 (Dia.) x 8.51mm

GBP 4.79

1

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 500 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 0.75 V

GBP 0.08

1

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 90 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Dimensions: 6.5 x 3.5 x 1.57mm

GBP 0.27

1

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 90 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Dimensions: 6.5 x 3.5 x 1.57mm

GBP 0.23

1

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 500 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 0.75 V

GBP 0.28

1

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204, Maximum Emitter Base Voltage: -50 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: -3.8 V, Maximum Collector Base Voltage: -250 V, Maximum Collector Emitter Saturation Voltage: -3.4 V, Dimensions: 21.08 (Dia.) x 8.51mm

GBP 6.41

1

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 90 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Dimensions: 6.5 x 3.5 x 1.57mm

GBP 0.10

1

onsemi BSP52T3G NPN Darlington Transistor, 1 A 80 V HFE:2000, 3 + Tab-Pin SOT-223

onsemi BSP52T3G NPN Darlington Transistor, 1 A 80 V HFE:2000, 3 + Tab-Pin SOT-223, Maximum Emitter Base Voltage: 5 V, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.9 V, Maximum Collector Base Voltage: 90 V, Maximum Collector Emitter Saturation Voltage: 1.3 V, Dimensions: 6.7 x 3.7 x 1.75mm

GBP 0.27

1

onsemi ON Semi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH

onsemi ON Semi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH, Mounting Type: Surface Mount, Maximum Power Dissipation: 900 mW, Transistor Configuration: Common Base, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Number of Elements per Chip: 2, Dimensions: 2.9 x 1.6 x 0.9mm, Maximum Base Emitter Saturation Voltage: 1.2 (NPN) V, -1.2 (PNP) V, Maximum Collector Emitter Saturation Voltage: 190 (NPN) mV, -430 (PNP) mV

GBP 0.04

1

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V dc, Maximum Collector Base Voltage: 60 V dc, Maximum Collector Emitter Saturation Voltage: 3 V dc, Dimensions: 10.28 x 4.82 x 15.75mm

GBP 0.78

1

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4.5 V dc, Maximum Collector Base Voltage: 60 V dc, Maximum Collector Emitter Saturation Voltage: 3 V dc, Dimensions: 10.28 x 4.82 x 15.75mm

GBP 0.78

1

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 75 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 700 V dc, Maximum Emitter Base Voltage: 12 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 10.53 x 4.83 x 15.75mm, Maximum Base Emitter Saturation Voltage: 1 V dc

GBP 1.11

1

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 75 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 700 V dc, Maximum Emitter Base Voltage: 12 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 10.53 x 4.83 x 15.75mm, Maximum Base Emitter Saturation Voltage: 1 V dc

GBP 1.11

1

onsemi 2N4401TF NPN Transistor, 600 mA, 40 V, 3-Pin TO-92

onsemi 2N4401TF NPN Transistor, 600 mA, 40 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 250 MHz, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 0.75 V

GBP 0.07

1

onsemi PN2222ATF NPN Transistor, 1 A, 40 V, 3-Pin TO-92

onsemi PN2222ATF NPN Transistor, 1 A, 40 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 75 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.03

1

onsemi 2N5550 NPN Transistor, 600 mA, 140 V, 3-Pin TO-92

onsemi 2N5550 NPN Transistor, 600 mA, 140 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 160 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 300 MHz, Dimensions: 4.58 x 3.86 x 4.58mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 0.25 V, MPN: 2N5550TFR

GBP 0.04

1

onsemi 2SB1202T-TL-E PNP Transistor, 3 A, 50 V, 3-Pin TP-FA

onsemi 2SB1202T-TL-E PNP Transistor, 3 A, 50 V, 3-Pin TP-FA, Mounting Type: Surface Mount, Maximum Power Dissipation: 15 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -60 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 150 MHz, Dimensions: 6.5 x 5.5 x 2.3mm, Maximum Base Emitter Saturation Voltage: -1.2 V, Maximum Collector Emitter Saturation Voltage: -0.7 mV

GBP 0.28

1

onsemi 2SA1552S-TL-H PNP Transistor, 1.5 A, 160 V, 3-Pin TP-FA

onsemi 2SA1552S-TL-H PNP Transistor, 1.5 A, 160 V, 3-Pin TP-FA, Mounting Type: Surface Mount, Maximum Power Dissipation: 15 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -180 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 120 MHz, Dimensions: 6.5 x 2.3 x 5.5mm, Maximum Base Emitter Saturation Voltage: -1.2 V, Maximum Collector Emitter Saturation Voltage: -0.5 V

GBP 0.32

1

onsemi 2SC3646S-TD-E NPN Transistor, 1 A, 100 V, 3-Pin PCP

onsemi 2SC3646S-TD-E NPN Transistor, 1 A, 100 V, 3-Pin PCP, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 120 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 4.5 x 2.5 x 1.5mm, Maximum Base Emitter Saturation Voltage: 1.2 V, Maximum Collector Emitter Saturation Voltage: 0.4 V

GBP 0.14

1

Vores kunder ligger øverst på Google

Google Ads Specialister fra Vestjylland

Brand

Gender

Merchant

Price (EUR)

onsemi AGB2N0CS-GEVK Evaluation Board User's Manual AGB2N0CS Evaluation Base Board for Headboards AGB2N0CS-GEVKOS

onsemi API Development Kit RCZ1 SigFox Evaluation Base Board for RCZ1 DVK-SFEU-API-1-GEVK

onsemi Small Signal Diode, 300mA 100V, 2-Pin DO-35 1N4148

onsemi SECO-GDBB-GEVB Gate Drivers Base Board Evaluation Board DC-DC Converter for SECO for NCP51705SMDGEVB,

onsemi BUV26G NPN Transistor, 20 A, 90 V, 3-Pin TO-220

onsemi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223

onsemi KSP44TF NPN Transistor, 300 mA, 400 V, 3-Pin TO-92

onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223

onsemi BSP52T3G NPN Darlington Transistor, 1 A 80 V HFE:2000, 3 + Tab-Pin SOT-223

onsemi ON Semi CPH5517-TL-E Dual NPN + PNP Transistor, 1 A, 50 V, 5-Pin CPH

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB

onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220

onsemi BUL45D2G NPN Transistor, 10 A, 400 V dc, 3-Pin TO-220

onsemi 2N4401TF NPN Transistor, 600 mA, 40 V, 3-Pin TO-92

onsemi PN2222ATF NPN Transistor, 1 A, 40 V, 3-Pin TO-92

onsemi 2N5550 NPN Transistor, 600 mA, 140 V, 3-Pin TO-92

onsemi 2SB1202T-TL-E PNP Transistor, 3 A, 50 V, 3-Pin TP-FA

onsemi 2SA1552S-TL-H PNP Transistor, 1.5 A, 160 V, 3-Pin TP-FA

onsemi 2SC3646S-TD-E NPN Transistor, 1 A, 100 V, 3-Pin PCP

NORDIC AD PARTNER

Powered by Cobiro